| Capacitor that includes dielectric layer structure having plural metal oxides doped with different impurities K Park, J Insang, LIM HanJin, Y Lee, J Lee US Patent 8,698,221, 2014 | 320 | 2014 |
| Storage electrode of a semiconductor memory device YS Yu, SS Kim, KH Hwang, HJ Lim, SJ Choi US Patent 6,809,363, 2004 | 71 | 2004 |
| Conduction barrier offset engineering for DRAM capacitor scaling M Pešić, S Knebel, K Cho, C Jung, J Chang, H Lim, N Kolomiiets, ... Solid-State Electronics 115, 133-139, 2016 | 47 | 2016 |
| 5.6 A 1/2.65 in 44Mpixel CMOS image sensor with 0.7 µm pixels fabricated in advanced full-depth deep-trench isolation technology HC Kim, J Park, I Joe, D Kwon, JH Kim, D Cho, T Lee, C Lee, H Park, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 104-106, 2020 | 43 | 2020 |
| Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes M Pešić, S Knebel, M Geyer, S Schmelzer, U Böttger, N Kolomiiets, ... Journal of Applied Physics 119 (6), 2016 | 42 | 2016 |
| METHOD OF FORMING A SEMICONDUCTOR DEVICE H Lim, S Nam, J Chung, K Yoon, J Seo, J Lee, S Bae, Lim, Hanjin US Patent 20,100,112,777, 2010 | 38* | 2010 |
| Methods of manufacturing semiconductor devices having a ruthenium layer via atomic layer deposition and associated apparatus and devices KH Lee, C Yoo, H Lim, JI Lee, SJ Chung US Patent App. 10/801,208, 2004 | 37 | 2004 |
| Growth and characterization of Pb (Mg1/3Nb2/3) O3 and Pb (Mg1/3Nb2/3) O3–PbTiO3 thin films using solid source MOCVD techniques SY Lee, MCC Custodio, HJ Lim, RS Feigelson, JP Maria, ... Journal of crystal growth 226 (2-3), 247-253, 2001 | 37 | 2001 |
| 5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using … J Lee, SS Kim, IG Baek, H Shim, T Kim, T Kim, J Kyoung, D Im, J Choi, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 102-104, 2020 | 33 | 2020 |
| Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors KH Lee, JY Kim, SJ Chung, KH Cho, H Lim, JI Lee, K Kim, J Lim US Patent 7,271,055, 2007 | 30 | 2007 |
| Methods of fabricating semiconductor devices using nanowires H Park, DH Im, SG Lee, JM Lee, H Lim US Patent 9,543,196, 2017 | 28 | 2017 |
| Semiconductor devices including diffusion barriers with high electronegativity metals H Lim, YS Kim, H Park, SG Lee, CHO Eun-Ae, CM Cho, S Kim, SW Nam US Patent 9,455,259, 2016 | 26 | 2016 |
| Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors S Ahn, Y Kim, S Kang, K Im, H Lim Journal of Vacuum Science & Technology A 35 (1), 2017 | 22 | 2017 |
| Low temperature crystallized Ta2O5/Nb2O5 bi-layers integrated into RIR capacitor for 60 nm generation and beyond K Cho, J Lee, JS Lim, H Lim, J Lee, S Park, CY Yoo, ST Kim, UI Chung, ... Microelectronic engineering 80, 317-320, 2005 | 22 | 2005 |
| Fabrication of metal/graphene hybrid interconnects by direct graphene growth and their integration properties CS Lee, KW Shin, HJ Song, H Park, Y Cho, DH Im, H Lee, JH Lee, ... Advanced Electronic Materials 4 (6), 1700624, 2018 | 21 | 2018 |
| Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors SY Lee, J Chang, Y Kim, HJ Lim, H Jeon, H Seo Applied Physics Letters 105 (20), 2014 | 21 | 2014 |
| Oxidation behavior of nanocrystalline Al alloys containing 5 and 10 at.% Ti JS Myung, HJ Lim, SG Kang Oxidation of metals 51 (1), 79-95, 1999 | 21 | 1999 |
| Epitaxial integration and properties of SrRuO3 on silicon Z Wang, HP Nair, GC Correa, J Jeong, K Lee, ES Kim, CS Lee, HJ Lim, ... APL Materials 6 (8), 2018 | 20 | 2018 |
| Semiconductor devices having a silicon-germanium channel layer and methods of forming the same Y Kim, H An, YEO Jaehyun, IM Badro, LIM HanJin, S Jang, J Insang US Patent 9,305,928, 2016 | 20 | 2016 |
| Unit cell structure, method of manufacturing the same, non-volatile semiconductor device having the unit cell structure and method of manufacturing the non-volatile … H Lim, J Lee, KH Cho, JI Lee, SH Park US Patent App. 11/480,547, 2007 | 20 | 2007 |
