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Vishal Kumar Aggarwal
Vishal Kumar Aggarwal
Research Fellow, S. N. Bose National Centre For Basic Sciences, Kolkata
Dirección de correo verificada de bose.res.in
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Temperature-dependent thermal conductivity of a single Germanium nanowire measured by Optothermal Raman Spectroscopy
S Sett, VK Aggarwal, A Singha, AK Raychaudhuri
Physical Review Applied 13 (5), 054008, 2020
72020
Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers
S Sett, VK Aggarwal, A Singha, S Bysakh, AK Raychaudhuri
Semiconductor Science and Technology 35 (2), 025020, 2020
62020
Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by oxygen ion implantation
VK Aggarwal, A Ghatak, D Kanjilal, D Kabiraj, A Singha, S Bysakh, ...
Materials Science and Engineering: B 260, 114616, 2020
52020
Phonons and Thermal Properties of Ge Nanowires: A Raman Spectroscopy Investigation and Phonon Simulations
VK Aggarwal, S Sett, J Sau, A Ghatak, M Kumar, A Singha, ...
The Journal of Physical Chemistry C 126 (35), 15046-15056, 2022
22022
Growth of Ge on silicon-on-insulator wafer by plasma enhanced chemical vapor deposition and fabrication of microline photodetector using the Ge layer
VK Aggarwal, S Sengupta, A Dey, A Ghatak, B Ghosh, S Bysakh, ...
Materials Science and Engineering: B 302, 117242, 2024
2024
Enhanced broad band photoresponse of a partially suspended horizontal array of Silicon microlines fabricated on Silicon-On-Insulator wafers
S Sett, VK Aggarwal, A Singha, S Bysakh, AK Raychaudhuri
arXiv preprint arXiv:2007.05777, 2020
2020
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