1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications A Gassenq, K Guilloy, G Osvaldo Dias, N Pauc, D Rouchon, JM Hartmann, ... Applied Physics Letters 107 (19), 2015 | 89 | 2015 |
Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations EG Gadret, GO Dias, LCO Dacal, MM de Lima Jr, C Ruffo, F Iikawa, ... Physical Review B 82 (12), 125327, 2010 | 79 | 2010 |
Germanium under high tensile stress: nonlinear dependence of direct band gap vs strain K Guilloy, N Pauc, A Gassenq, YM Niquet, JM Escalante, I Duchemin, ... ACS photonics 3 (10), 1907-1911, 2016 | 70 | 2016 |
Accurate strain measurements in highly strained Ge microbridges A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias, N Pauc, I Duchemin, ... Applied Physics Letters 108 (24), 2016 | 50 | 2016 |
Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers V Reboud, A Gassenq, K Guilloy, GO Dias, JM Escalante, S Tardif, ... Silicon Photonics XI 9752, 73-80, 2016 | 24 | 2016 |
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering S Tardif, A Gassenq, K Guilloy, N Pauc, G Osvaldo Dias, JM Hartmann, ... Journal of Applied Crystallography 49 (5), 1402-1411, 2016 | 23 | 2016 |
Study of the light emission in Ge layers and strained membranes on Si substrates A Gassenq, K Guilloy, N Pauc, JM Hartmann, GO Dias, D Rouchon, ... Thin Solid Films 613, 64-67, 2016 | 21 | 2016 |
Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications V Reboud, J Widiez, JM Hartmann, GO Dias, D Fowler, A Chelnokov, ... Silicon Photonics X 9367, 231-236, 2015 | 19 | 2015 |
On-chip polychromatic visible light emitters obtained by 3D capillary force assembly J Cordeiro, F Funfschilling, O Lecarme, GO Dias, E Picard, D Peyrade Microelectronic engineering 110, 414-417, 2013 | 11 | 2013 |
Characterization of silicon rich oxides with tunable optical band gap on sapphire substrates by photoluminescence, UV/Vis and Raman spectroscopy R Kiebach, JA Luna-López, GO Dias, M Aceves-Mijares, ... Journal of the Mexican Chemical Society 52 (3), 212-218, 2008 | 8 | 2008 |
Microscale white light emitters fabricated by two-photon polymerization lithography on functional resist GO Dias, O Lecarme, J Cordeiro, E Picard, D Peyrade Microelectronic Engineering 257, 111751, 2022 | 6 | 2022 |
Three-dimensional capillary force assembly: Fabrication of white light emitters J Cordeiro, O Lecarme, G Osvaldo Dias, D Peyrade Journal of Vacuum Science & Technology B 30 (6), 2012 | 6 | 2012 |
Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts F Iikawa, V Donchev, T Ivanov, GO Dias, LHG Tizei, R Lang, E Heredia, ... Nanotechnology 22 (6), 065703, 2011 | 4 | 2011 |
Distributed Bragg reflectors integration in highly strained Ge micro-bridges on 200 mm GeOI substrates for laser applications A Gassenq, S Tardif, K Guilloy, N Pauc, J Escalante, I Duchemin, ... 2015 IEEE 12th International Conference on Group IV Photonics (GFP), 51-52, 2015 | 3 | 2015 |
Design rules to control the tensile strain in Ge μ-membranes fabricated from GeOI substrates for photonics applications GO Dias, D Rouchon, J Widiez, JM Hartmann, D Fowler, A Chelnokov, ... 2015 IEEE 12th International Conference on Group IV Photonics (GFP), 133-134, 2015 | 2 | 2015 |
DBR based cavities in strained Ge microbridge on 200 mm Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible laser applications A Gassenq, GO Dias, K Guiloy, S Tardif, N Pauc, D Rouchon, J Widiez, ... The European Conference on Lasers and Electro-Optics, CB_11_1, 2015 | 2 | 2015 |
Self Assembly of Silicon Nanoislands on Crystalline Silicon Under a Photoactive Layer WR Kiebach, M Aceves-Mijares, Z Yu, K Monfil, JW Swart, GO Dias Smart Nanocomposites 1 (1), 31-39, 2010 | 2 | 2010 |
Preparation and characterization of silicon nanostructures obtained by ion implantation SNM Mestanza, GO Dias, JEC Queiroz, I Doi, JW Swart, E Rodriguez, ... Proceedings-Electrochemical Society, 169-174, 2004 | 2 | 2004 |
Photocurrent spectroscopy and X-ray microdiffraction study of highly strained germanium nanostructures K Guilloy, N Pauc, A Gassenq, P Gentile, S Tardif, F Rieutord, J Escalante, ... 2015 IEEE 12th International Conference on Group IV Photonics (GFP), 173-174, 2015 | 1 | 2015 |
Growth and characterization of silicon nanocrystals obtained by ion implantation GO Dias, SNM Mestanza, JEC Queiroz, E Marins, I Doi, E Rodriguez, ... 20th Symposium on Microelectronics Technology and Devices, SBMicro 2005, 2005 | 1 | 2005 |