| A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1/spl mu/m/sup 2/SRAM cell S Thompson, N Anand, M Armstrong, C Auth, B Arcot, M Alavi, P Bai, ... Digest. International Electron Devices Meeting,, 61-64, 2002 | 452 | 2002 |
| A high performance 1.8 V, 0.20/spl mu/m CMOS technology with copper metallization S Venkatesan, AV Gelatos, S Hisra, B Smith, R Islam, J Cope, B Wilson, ... International Electron Devices Meeting. IEDM Technical Digest, 769-772, 1997 | 317 | 1997 |
| Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC) A Jain, K Lucas US Patent 5,741,626, 1998 | 252 | 1998 |
| Process for forming a semiconductor device A Jain US Patent 5,821,168, 1998 | 216 | 1998 |
| Method for forming a semiconductor device G Braeckelmann, R Venkatraman, MT Herrick, CR Simpson, ... US Patent 6,218,302, 2001 | 161 | 2001 |
| Chemical vapor deposition of copper from hexafluoroacetylacetonato copper (I) vinyltrimethylsilane: deposition rates, mechanism, selectivity, morphology, and resistivity as a … A Jain, KM Chi, TT Kodas, MJ Hampden‐Smith Journal of the Electrochemical Society 140 (5), 1434, 1993 | 154 | 1993 |
| Chemical vapor deposition of copper from (hexafluoroacetylacetonato)(alkyne) copper (I) complexes via disproportionation A Jain, KM Chi, TT Kodas, MJ Hampden-Smith, JD Farr, MF Paffett Chemistry of materials 3 (6), 995-997, 1991 | 146 | 1991 |
| Selective and blanket copper chemical vapor deposition for ultra‐large‐scale integration A Jain, TT Kodas, R Jairath, MJ Hampden‐Smith Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 117 | 1993 |
| Adhesion between carbon doped oxide and etch stop layers A Ott, A Jain, Y Zhou, J Xu US Patent App. 10/683,759, 2005 | 111 | 2005 |
| Method of forming a barrier layer A Jain, E Weitzman US Patent 6,153,519, 2000 | 110 | 2000 |
| Method for making a ferroelectric device RE Jones Jr, PY Chu, P Zurcher, A Jain US Patent 5,716,875, 1998 | 106 | 1998 |
| Method for preventing electroplating of copper on an exposed surface at the edge exclusion of a semiconductor wafer A Jain US Patent 5,933,758, 1999 | 90 | 1999 |
| Control of selectivity during chemical vapor deposition of copper from copper (I) compounds via silicon dioxide surface modification A Jain, J Farkas, TT Kodas, KM Chi, MJ Hampden‐Smith Applied physics letters 61 (22), 2662-2664, 1992 | 88 | 1992 |
| Chemical vapor deposition of copper via disproportionation of hexafluoroacetylacetonato (1, 5-cyclooctadiene) copper (I),(hfac) Cu (1, 5-COD) A Jain, KM Chi, MJ Hampden-Smith, TT Kodas, JD Farr, MF Paffett Journal of materials research 7, 261-264, 1992 | 84 | 1992 |
| 90 nm generation, 300 mm wafer low k ILD/Cu interconnect technology CH Jan, J Bielefeld, M Buehler, V Chikamane, K Fischer, T Hepburn, ... Proceedings of the IEEE 2003 International Interconnect Technology …, 2003 | 77 | 2003 |
| Thermal dry-etching of copper using hydrogen peroxide and hexafluoroacetylacetone A Jain, TT Kodas, MJ Hampden-Smith Thin Solid Films 269 (1-2), 51-56, 1995 | 74 | 1995 |
| Chemical vapor deposition of copper from (hfac) CuL (L= VTMS and 2-butyne) in the presence of water, methanol, and dimethyl ether A Jain, TT Kodas, TS Corbitt, MJ Hampden-Smith Chemistry of materials 8 (5), 1119-1127, 1996 | 56 | 1996 |
| Selective chemical vapor deposition of copper using (hfac) copper (I) vinyltrimethylsilane in the absence and presence of water A Jain, AV Gelatos, TT Kodas, MJ Hampden-Smith, R Marsh, CJ Mogab Thin Solid Films 262 (1-2), 52-59, 1995 | 47 | 1995 |
| Method for protecting the edge exclusion of a semiconductor wafer from copper plating through use of an edge exclusion masking layer R Chowdhury, A Jain, O Adetutu US Patent 6,268,289, 2001 | 46 | 2001 |
| Method for making a ferroelectric device having a tantalum nitride barrier layer RE Jones Jr, PY Chu, P Zurcher, A Jain US Patent 6,010,927, 2000 | 40 | 2000 |
