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AJAY JAIN
AJAY JAIN
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A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1/spl mu/m/sup 2/SRAM cell
S Thompson, N Anand, M Armstrong, C Auth, B Arcot, M Alavi, P Bai, ...
Digest. International Electron Devices Meeting,, 61-64, 2002
3982002
A high performance 1.8 V, 0.20/spl mu/m CMOS technology with copper metallization
S Venkatesan, AV Gelatos, S Hisra, B Smith, R Islam, J Cope, B Wilson, ...
International Electron Devices Meeting. IEDM Technical Digest, 769-772, 1997
3141997
Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
A Jain, K Lucas
US Patent 5,741,626, 1998
2511998
Process for forming a semiconductor device
A Jain
US Patent 5,821,168, 1998
2141998
Method for forming a semiconductor device
G Braeckelmann, R Venkatraman, MT Herrick, CR Simpson, ...
US Patent 6,218,302, 2001
1562001
Chemical vapor deposition of copper from hexafluoroacetylacetonato copper (I) vinyltrimethylsilane: deposition rates, mechanism, selectivity, morphology, and resistivity as a …
A Jain, KM Chi, TT Kodas, MJ Hampden‐Smith
Journal of the Electrochemical Society 140 (5), 1434, 1993
1431993
Chemical vapor deposition of copper from (hexafluoroacetylacetonato)(alkyne) copper (I) complexes via disproportionation
A Jain, KM Chi, TT Kodas, MJ Hampden-Smith, JD Farr, MF Paffett
Chemistry of materials 3 (6), 995-997, 1991
1431991
Selective and blanket copper chemical vapor deposition for ultra‐large‐scale integration
A Jain, TT Kodas, R Jairath, MJ Hampden‐Smith
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
1161993
Method of forming a barrier layer
A Jain, E Weitzman
US Patent 6,153,519, 2000
1092000
Adhesion between carbon doped oxide and etch stop layers
A Ott, A Jain, Y Zhou, J Xu
US Patent App. 10/683,759, 2005
1022005
Method for making a ferroelectric device
RE Jones Jr, PY Chu, P Zurcher, A Jain
US Patent 5,716,875, 1998
951998
Method for preventing electroplating of copper on an exposed surface at the edge exclusion of a semiconductor wafer
A Jain
US Patent 5,933,758, 1999
901999
Control of selectivity during chemical vapor deposition of copper from copper (I) compounds via silicon dioxide surface modification
A Jain, J Farkas, TT Kodas, KM Chi, MJ Hampden‐Smith
Applied physics letters 61 (22), 2662-2664, 1992
881992
Chemical vapor deposition of copper via disproportionation of hexafluoroacetylacetonato (1, 5-cyclooctadiene) copper (I),(hfac) Cu (1, 5-COD)
A Jain, KM Chi, MJ Hampden-Smith, TT Kodas, JD Farr, MF Paffett
Journal of materials research 7 (2), 261-264, 1992
841992
90 nm generation, 300 mm wafer low k ILD/Cu interconnect technology
CH Jan, J Bielefeld, M Buehler, V Chikamane, K Fischer, T Hepburn, ...
Proceedings of the IEEE 2003 International Interconnect Technology …, 2003
762003
Thermal dry-etching of copper using hydrogen peroxide and hexafluoroacetylacetone
A Jain, TT Kodas, MJ Hampden-Smith
Thin Solid Films 269 (1-2), 51-56, 1995
661995
Chemical vapor deposition of copper from (hfac) CuL (L= VTMS and 2-butyne) in the presence of water, methanol, and dimethyl ether
A Jain, TT Kodas, TS Corbitt, MJ Hampden-Smith
Chemistry of materials 8 (5), 1119-1127, 1996
501996
Method for protecting the edge exclusion of a semiconductor wafer from copper plating through use of an edge exclusion masking layer
R Chowdhury, A Jain, O Adetutu
US Patent 6,268,289, 2001
452001
Selective chemical vapor deposition of copper using (hfac) copper (I) vinyltrimethylsilane in the absence and presence of water
A Jain, AV Gelatos, TT Kodas, MJ Hampden-Smith, R Marsh, CJ Mogab
Thin Solid Films 262 (1-2), 52-59, 1995
411995
Method for making a ferroelectric device having a tantalum nitride barrier layer
RE Jones Jr, PY Chu, P Zurcher, A Jain
US Patent 6,010,927, 2000
402000
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