Low-threshold optically pumped lasing in highly strained germanium nanowires S Bao, D Kim, C Onwukaeme, S Gupta, K Saraswat, KH Lee, Y Kim, D Min, ... Nature Communications 8 (1), 1845, 2017 | 173 | 2017 |
Integration of III–V materials and Si-CMOS through double layer transfer process KH Lee, S Bao, E Fitzgerald, CS Tan Japanese Journal of Applied Physics 54 (3), 030209, 2015 | 98 | 2015 |
Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics W Li, P Anantha, S Bao, KH Lee, X Guo, T Hu, L Zhang, H Wang, R Soref, ... Applied physics letters 109 (24), 2016 | 92 | 2016 |
Electric field directed assembly of an InGaAs LED onto silicon circuitry CF Edman, RB Swint, C Gurtner, RE Formosa, SD Roh, KE Lee, ... IEEE Photonics Technology Letters 12 (9), 1198-1200, 2000 | 86 | 2000 |
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm H Zhou, S Xu, Y Lin, YC Huang, B Son, Q Chen, X Guo, KH Lee, SCK Goh, ... Optics express 28 (7), 10280-10293, 2020 | 84 | 2020 |
High-efficiency normal-incidence vertical pin photodetectors on a germanium-on-insulator platform Y Lin, KH Lee, S Bao, X Guo, H Wang, J Michel, CS Tan Photonics Research 5 (6), 702-709, 2017 | 70 | 2017 |
Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics BW Jia, KH Tan, WK Loke, S Wicaksono, KH Lee, SF Yoon ACS Photonics 5 (4), 1512-1520, 2018 | 65 | 2018 |
Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer KH Lee, S Bao, GY Chong, YH Tan, EA Fitzgerald, CS Tan Journal of Applied Physics 116 (10), 2014 | 62 | 2014 |
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber KH Lee, A Jandl, YH Tan, EA Fitzgerald, CS Tan Aip Advances 3 (9), 2013 | 61 | 2013 |
Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer KH Lee, S Bao, B Wang, C Wang, SF Yoon, J Michel, EA Fitzgerald, ... AIP Advances 6 (2), 2016 | 59 | 2016 |
Sensitivity enhancement in grating coupled surface plasmon resonance by azimuthal control F Romanato, KH Lee, HK Kang, G Ruffato, CC Wong Optics express 17 (14), 12145-12154, 2009 | 59 | 2009 |
Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient KH Lee, S Bao, GY Chong, YH Tan, EA Fitzgerald, CS Tan APL Materials 3 (1), 2015 | 58 | 2015 |
Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process KH Lee, S Bao, L Zhang, D Kohen, E Fitzgerald, CS Tan Applied Physics Express 9 (8), 086501, 2016 | 52 | 2016 |
Little-parks oscillations in an insulator G Kopnov, O Cohen, M Ovadia, KH Lee, CC Wong, D Shahar Physical review letters 109 (16), 167002, 2012 | 49 | 2012 |
A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers S Bao, Y Wang, K Lina, L Zhang, B Wang, WA Sasangka, KEK Lee, ... Journal of Semiconductors 42 (2), 023106, 2021 | 48 | 2021 |
Dark current analysis of germanium-on-insulator vertical pin photodetectors with varying threading dislocation density B Son, Y Lin, KH Lee, Q Chen, CS Tan Journal of Applied Physics 127 (20), 2020 | 43 | 2020 |
Method of manufacturing a substrate KH Lee, CS Tan, EA Fitzgerald, EKK Lee US Patent 10,049,947, 2018 | 43 | 2018 |
The role of polarization on surface plasmon polariton excitation on metallic gratings in the conical mounting F Romanato, KH Lee, G Ruffato, CC Wong Applied Physics Letters 96 (11), 2010 | 43 | 2010 |
GeSn-on-insulator substrate formed by direct wafer bonding D Lei, KH Lee, S Bao, W Wang, B Wang, X Gong, CS Tan, YC Yeo Applied Physics Letters 109 (2), 2016 | 42 | 2016 |
Comparative studies of the growth and characterization of germanium epitaxial film on silicon (001) with 0° and 6° offcut KH Lee, YH Tan, A Jandl, EA Fitzgerald, CS Tan Journal of electronic materials 42, 1133-1139, 2013 | 42 | 2013 |