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Simin Feng (冯思敏)
Simin Feng (冯思敏)
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS
Dirección de correo verificada de sinano.ac.cn - Página principal
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Beyond graphene: progress in novel two-dimensional materials and van der Waals solids
S Das, JA Robinson, M Dubey, H Terrones, M Terrones
Annual Review of Materials Research 45 (1), 1-27, 2015
7342015
Controlled Synthesis and Transfer of Large-Area WS2 Sheets: From Single Layer to Few Layers
AL Elías, N Perea-López, A Castro-Beltrán, A Berkdemir, R Lv, S Feng, ...
ACS nano 7 (6), 5235-5242, 2013
6962013
Photosensor Device Based on Few‐Layered WS2 Films
N Perea‐López, AL Elías, A Berkdemir, A Castro‐Beltran, HR Gutiérrez, ...
Advanced Functional Materials 23 (44), 5511-5517, 2013
6812013
Three-dimensionally bonded spongy graphene material with super compressive elasticity and near-zero Poisson’s ratio
Y Wu, N Yi, L Huang, T Zhang, S Fang, H Chang, N Li, J Oh, JA Lee, ...
Nature communications 6 (1), 6141, 2015
5782015
New first order Raman-active modes in few layered transition metal dichalcogenides
H Terrones, ED Corro, S Feng, JM Poumirol, D Rhodes, D Smirnov, ...
Scientific reports 4 (1), 4215, 2014
5392014
Manganese Doping of Monolayer MoS2: The Substrate Is Critical
K Zhang, S Feng, J Wang, A Azcatl, N Lu, R Addou, N Wang, C Zhou, ...
Nano letters 15 (10), 6586-6591, 2015
4622015
Field-Effect Transistors Based on Few-Layered α-MoTe2
NR Pradhan, D Rhodes, S Feng, Y Xin, S Memaran, BH Moon, ...
ACS nano 8 (6), 5911-5920, 2014
3952014
Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide
V Carozo, Y Wang, K Fujisawa, BR Carvalho, A McCreary, S Feng, Z Lin, ...
Science advances 3 (4), e1602813, 2017
2982017
Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe2 Observed by Resonant Raman Spectroscopy
E Del Corro, H Terrones, A Elias, C Fantini, S Feng, MA Nguyen, ...
ACS nano 8 (9), 9629-9635, 2014
2942014
Ultrasensitive gas detection of large-area boron-doped graphene
R Lv, G Chen, Q Li, A McCreary, A Botello-Méndez, SV Morozov, L Liang, ...
Proceedings of the National Academy of Sciences 112 (47), 14527-14532, 2015
2082015
Ultrasensitive molecular sensor using N-doped graphene through enhanced Raman scattering
S Feng, MC dos Santos, BR Carvalho, R Lv, Q Li, K Fujisawa, AL Elías, ...
Science Advances 2 (7), e1600322, 2016
2042016
Flexible artificial sensory systems based on neuromorphic devices
F Sun, Q Lu, S Feng, T Zhang
ACS nano 15 (3), 3875-3899, 2021
1782021
Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors
NR Pradhan, D Rhodes, S Memaran, JM Poumirol, D Smirnov, ...
Scientific reports 5 (1), 8979, 2015
1652015
Atypical Exciton–Phonon Interactions in WS2 and WSe2 Monolayers Revealed by Resonance Raman Spectroscopy
E del Corro, A Botello-Méndez, Y Gillet, AL Elias, H Terrones, S Feng, ...
Nano letters 16 (4), 2363-2368, 2016
1632016
Electrochemical characterization of liquid phase exfoliated two-dimensional layers of molybdenum disulfide
A Winchester, S Ghosh, S Feng, AL Elias, T Mallouk, M Terrones, ...
ACS applied materials & interfaces 6 (3), 2125-2130, 2014
1622014
Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers
Y Gong, Z Lin, G Ye, G Shi, S Feng, Y Lei, AL Elías, N Perea-Lopez, ...
ACS nano 9 (12), 11658-11666, 2015
1562015
Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2
NR Pradhan, A McCreary, D Rhodes, Z Lu, S Feng, E Manousakis, ...
Nano letters 15 (12), 8377-8384, 2015
1372015
Facile synthesis of MoS2 and MoxW1-xS2 triangular monolayers
Z Lin, MT Thee, AL Elías, S Feng, C Zhou, K Fujisawa, N Perea-López, ...
Apl Materials 2 (9), 2014
1332014
Large-area'SI'-doped graphene: controllable synthesis and enhanced molecular sensing
R Lv, C Antonelli, S Feng, K Fujisawa, A Berkdemir, AL Elias, ...
Advanced Materials 26 (45), 7593-7599, 2014
1312014
Vertical chemical vapor deposition growth of highly uniform 2D transition metal dichalcogenides
L Tang, T Li, Y Luo, S Feng, Z Cai, H Zhang, B Liu, HM Cheng
ACS nano 14 (4), 4646-4653, 2020
1292020
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