| Oxidation of silicon–germanium alloys. II. A mathematical model PE Hellberg, SL Zhang, FM dHeurle, CS Petersson Journal of applied physics 82 (11), 5779-5787, 1997 | 133* | 1997 |
| Oxidation of silicon–germanium alloys. I. An experimental study PE Hellberg, SL Zhang, FM d’Heurle, CS Petersson Journal of applied physics 82 (11), 5773-5778, 1997 | 104 | 1997 |
| Work function of boron-doped polycrystalline Si/sub x/Ge/sub 1-x/films PE Hellberg, SL Zhang, CS Petersson IEEE Electron Device Letters 18 (9), 456-458, 1997 | 84 | 1997 |
| 1/f noise in Si and si/sub 0.7/Ge/sub 0.3/pMOSFETs M von Haartman, AC Lindgren, PE Hellstrom, BG Malm, SL Zhang, ... IEEE Transactions on Electron Devices 50 (12), 2513-2519, 2003 | 48 | 2003 |
| SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation Z Zhang, Z Qiu, PE Hellstrom, G Malm, J Olsson, J Lu, M Ostling, ... IEEE electron device letters 29 (1), 125-127, 2007 | 47 | 2007 |
| Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator J Seger, PE Hellström, J Lu, BG Malm, M von Haartman, M Östling, ... Applied Physics Letters 86 (25), 2005 | 45 | 2005 |
| Characterization of transfer-bonded silicon bolometer arrays F Niklaus, J Pejnefors, M Dainese, M Haggblad, PE Hellstrom, ... Infrared Technology and Applications XXX 5406, 521-530, 2004 | 43 | 2004 |
| Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs J Hållstedt, PE Hellström, HH Radamson Thin Solid Films 517 (1), 117-120, 2008 | 40 | 2008 |
| Boron‐Doped Polycrystalline Si x Ge1− x Films: Dopant Activation and Solid Solubility PE Hellberg, A Gagnor, SL Zhang, CS Petersson Journal of the Electrochemical Society 144 (11), 3968, 1997 | 40 | 1997 |
| Reduced self-heating by strained silicon substrate engineering A O’Neill, R Agaiby, S Olsen, Y Yang, PE Hellstrom, M Ostling, M Oehme, ... Applied surface science 254 (19), 6182-6185, 2008 | 39 | 2008 |
| A robust spacer gate process for deca-nanometer high-frequency MOSFETs J Hållstedt, PE Hellström, Z Zhang, BG Malm, J Edholm, J Lu, SL Zhang, ... Microelectronic Engineering 83 (3), 434-439, 2006 | 39 | 2006 |
| Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals JV Grahn, PE Hellberg, E Olsson Journal of applied physics 84 (3), 1632-1642, 1998 | 38 | 1998 |
| Strained Si/SiGe MOS technology: Improving gate dielectric integrity SH Olsen, L Yan, R Agaiby, E Escobedo-Cousin, AG O’Neill, ... Microelectronic Engineering 86 (3), 218-223, 2009 | 34 | 2009 |
| Effects of carbon on Schottky barrier heights of NiSi modified by dopant segregation J Luo, ZJ Qiu, DW Zhang, PE Hellstrom, M Ostling, SL Zhang IEEE electron device letters 30 (6), 608-610, 2009 | 33 | 2009 |
| A novel strained Si0. 7Ge0. 3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack D Wu, AC Lindgren, S Persson, G Sjöblom, M von Haartman, J Seger, ... IEEE Electron Device Letters 24 (3), 171-173, 2003 | 33 | 2003 |
| Thulium silicate interfacial layer for scalable high-k/metal gate stacks ED Litta, PE Hellström, C Henkel, M Östling IEEE transactions on electron devices 60 (10), 3271-3276, 2013 | 32 | 2013 |
| 550° C 4H-SiC pin photodiode array with two-layer metallization S Hou, PE Hellström, CM Zetterling, M Östling IEEE Electron Device Letters 37 (12), 1594-1596, 2016 | 31 | 2016 |
| Electrically robust ultralong nanowires of NiSi, Ni2Si, and Ni31Si12 Z Zhang, PE Hellström, M Östling, SL Zhang, J Lu Applied physics letters 88 (4), 2006 | 30 | 2006 |
| Hole effective mass in silicon inversion layers with different substrate orientations and channel directions L Donetti, F Gámiz, S Thomas, TE Whall, DR Leadley, PE Hellström, ... Journal of Applied Physics 110 (6), 2011 | 29 | 2011 |
| Low-frequency noise and Coulomb scattering in Si0. 8Ge0. 2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics M von Haartman, J Westlinder, D Wu, BG Malm, PE Hellström, J Olsson, ... Solid-state electronics 49 (6), 907-914, 2005 | 28 | 2005 |
