High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕ Ga2O3 (Gd2O3) as gate dielectrics TD Lin, HC Chiu, P Chang, LT Tung, CP Chen, M Hong, J Kwo, W Tsai, ...
Applied Physics Letters 93 (3), 2008
171 2008 Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric YC Chang, WH Chang, HC Chiu, LT Tung, CH Lee, KH Shiu, M Hong, ...
Applied Physics Letters 93 (5), 2008
82 2008 Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0. 53Ga0. 47As HC Chiu, LT Tung, YH Chang, YJ Lee, CC Chang, J Kwo, M Hong
Applied Physics Letters 93 (20), 2008
73 2008 1nm equivalent oxide thickness in Ga2O3 (Gd2O3)∕ In0. 2Ga0. 8As metal-oxide-semiconductor capacitors KH Shiu, TH Chiang, P Chang, LT Tung, M Hong, J Kwo, W Tsai
Applied Physics Letters 92 (17), 2008
61 2008 Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge LK Chu, WC Lee, ML Huang, YH Chang, LT Tung, CC Chang, YJ Lee, ...
Journal of crystal growth 311 (7), 2195-2198, 2009
47 2009 Molecular beam epitaxy grown Ga2O3 (Gd2O3) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics CH Lee, TD Lin, LT Tung, ML Huang, M Hong, J Kwo
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
25 2008 Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium WC Lee, BH Chin, LK Chu, TD Lin, YJ Lee, LT Tung, CH Lee, M Hong, ...
Journal of crystal growth 311 (7), 2187-2190, 2009
19 2009 Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealing YJ Lee, CH Lee, LT Tung, TH Chiang, TY Lai, J Kwo, CH Hsu, M Hong
Journal of Physics D: Applied Physics 43 (13), 135101, 2010
13 2010 Oxide scalability in Al2O3∕ Ga2O3 (Gd2O3)∕ In0. 20Ga0. 80As∕ GaAs heterostructures KH Shiu, CH Chiang, YJ Lee, WC Lee, P Chang, LT Tung, M Hong, J Kwo, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
12 2008 Tri-gate graphene nanoribbon transistors with transverse-field bandgap modulation LT Tung, MV Mateus, EC Kan
IEEE Transactions on Electron Devices 61 (9), 3329-3334, 2014
11 2014 Growth and structural characteristics of GaN∕ AlN/nanothick γ-Al2O3∕ Si (111) WC Lee, YJ Lee, LT Tung, SY Wu, CH Lee, M Hong, HM Ng, J Kwo, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
8 2008 Sharp switching by field-effect bandgap modulation in all-graphene side-gate transistors LT Tung, EC Kan
IEEE Journal of the Electron Devices Society 3 (3), 144-148, 2015
6 2015 Inversion-channel GaN MOSFET using atomic-layer-deposited Al2 O3 as gate dielectric YC Chang, WH Chang, HC Chiu, YH Chang, LT Tung, CH Lee, M Hong, ...
2009 International Symposium on VLSI Technology, Systems, and Applications …, 2009
4 2009 Interface and oxide quality of CoFeB/MgO/Si tunnel junctions JT Shaw, HW Tseng, S Rajwade, LT Tung, RA Buhrman, EC Kan
Journal of Applied Physics 111 (9), 2012
2 2012 Side-gate-controlled dual-mode power gating device by graphene nanoribbon transistor LT Tung, EC Kan
71st Device Research Conference, 87-88, 2013
1 2013 Transverse-field bandgap modulation on graphene nanoribbon transistors by double-self-aligned spacers LT Tung, MV Mateus, EC Kan
70th Device Research Conference, 113-114, 2012
1 2012 High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers LK Chu, RL Chu, ML Huang, LT Tung, TD Lin, CC Chang, J Kwo, M Hong
2009 Proceedings of the European Solid State Device Research Conference, 407-410, 2009
2009 Metal-oxide-semiconductor devices with UHV-Ga2 O3 (Gd2 O3 ) on Ge(100) LK Chu, TD Lin, CH Lee, LT Tung, WC Lee, RL Chu, CC Chang, M Hong, ...
2009 International Symposium on VLSI Technology, Systems, and Applications …, 2009
2009 Growth and structural characteristics of WC Lee, YJ Lee, LT Tung, SY Wu, CH Lee, M Hong, HM Ng, J Kwo, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
2008 Interfacial-layers-free Ga2 O3 (Gd2 O3 )/Ge MOS Diodes CH Lee, TD Lin, KY Lee, ML Huang, LT Tung, M Hong, J Kwo
APS March Meeting Abstracts, Q35. 010, 2008
2008 