| Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect AM Lepadatu, A Slav, C Palade, I Dascalescu, M Enculescu, S Iftimie, ... Scientific Reports 8 (1), 4898, 2018 | 38 | 2018 |
| How morphology determines the charge storage properties of Ge nanocrystals in HfO2 A Slav, C Palade, AM Lepadatu, ML Ciurea, VS Teodorescu, S Lazanu, ... Scripta Materialia 113, 135-138, 2016 | 30 | 2016 |
| Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors AM Lepadatu, C Palade, A Slav, AV Maraloiu, S Lazanu, T Stoica, ... Nanotechnology 28 (17), 175707, 2017 | 27 | 2017 |
| GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics A Slav, I Dascalescu, AM Lepadatu, C Palade, NC Zoita, H Stroescu, ... ACS Applied Materials & Interfaces 12 (50), 56161-56171, 2020 | 23 | 2020 |
| A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO 2 nanocrystals stabilized by HfO 2 capping and self-controlled Ge doping C Palade, AM Lepadatu, A Slav, O Cojocaru, A Iuga, VA Maraloiu, ... Journal of Materials Chemistry C 9 (36), 12353-12366, 2021 | 21 | 2021 |
| GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection A Slav, C Palade, C Logofatu, I Dascalescu, AM Lepadatu, I Stavarache, ... ACS Applied Nano Materials 2 (6), 3626-3635, 2019 | 21 | 2019 |
| Epitaxial GeSn obtained by high power impulse magnetron sputtering and the heterojunction with embedded GeSn nanocrystals for shortwave infrared detection I Dascalescu, NC Zoita, A Slav, E Matei, S Iftimie, F Comanescu, ... ACS applied materials & interfaces 12 (30), 33879-33886, 2020 | 18 | 2020 |
| Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation C Palade, A Slav, AM Lepadatu, I Stavarache, I Dascalescu, AV Maraloiu, ... Nanotechnology 30 (44), 445501, 2019 | 18 | 2019 |
| Non‐volatile memory devices based on Ge nanocrystals D Vasilache, A Cismaru, M Dragoman, I Stavarache, C Palade, ... physica status solidi (a) 213 (2), 255-259, 2016 | 14 | 2016 |
| Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2 C Palade, AM Lepadatu, A Slav, S Lazanu, VS Teodorescu, T Stoica, ... Applied Surface Science 428, 698-702, 2018 | 13 | 2018 |
| GeSi nanocrystals photo-sensors for optical detection of slippery road conditions combining two classification algorithms C Palade, I Stavarache, T Stoica, ML Ciurea Sensors 20 (21), 6395, 2020 | 12 | 2020 |
| Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe–TiO2 Films and Multilayers AM Lepadatu, C Palade, A Slav, O Cojocaru, VA Maraloiu, S Iftimie, ... The Journal of Physical Chemistry C 124 (45), 25043-25053, 2020 | 12 | 2020 |
| Wafer-scale graphene-ferroelectric HfO2/Ge–HfO2/HfO2 transistors acting as three-terminal memristors M Dragoman, A Dinescu, D Dragoman, C Palade, A Moldovan, ... Nanotechnology 31 (49), 495207, 2020 | 12 | 2020 |
| Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared C Palade, AM Lepadatu, A Slav, VS Teodorescu, T Stoica, ML Ciurea, ... Materials 14 (22), 7040, 2021 | 10 | 2021 |
| Effects produced by iodine irradiation on high resistivity silicon S Lazanu, A Slav, AM Lepadatu, I Stavarache, C Palade, G Iordache, ... Applied Physics Letters 101 (24), 2012 | 10 | 2012 |
| Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates M Dragoman, A Dinescu, D Dragoman, C Palade, VŞ Teodorescu, ... Nanomaterials 12 (2), 279, 2022 | 7 | 2022 |
| Optoelectric charging-discharging of Ge nanocrystals in floating gate memory C Palade, A Slav, AM Lepadatu, AV Maraloiu, I Dascalescu, S Iftimie, ... Applied Physics Letters 113 (21), 2018 | 7 | 2018 |
| Photosensitive GeSi/TiO2multilayers in VIS-NIR C Palade, I Dascalescu, A Slav, AM Lepadatu, S Lazanu, T Stoica, ... 2017 International Semiconductor Conference (CAS), 67-70, 2017 | 7 | 2017 |
| SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors C Palade, A Slav, O Cojocaru, VS Teodorescu, T Stoica, ML Ciurea, ... Coatings 12 (3), 348, 2022 | 6 | 2022 |
| Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers A Slav, C Palade, I Stavarache, VS Teodorescu, ML Ciurea, R Müller, ... Semiconductor Conference (CAS), 2017 International, 63-66, 2017 | 5 | 2017 |
Magdalena Lidia CiureaNational Institute of Materials Physics, Bucharest, ROMANIADirección de correo verificada de infim.ro
