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Guilherme Cardoso Medeiros
Guilherme Cardoso Medeiros
Verified email at tudelft.nl - Homepage
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Year
Device-Aware Test: A New test Approach Towards DPPB Level
M Fieback, L Wu, GC Medeiros, H Aziza, S Rao, EJ Marinissen, M Taouil, ...
2019 IEEE International Test Conference (ITC), 1-10, 2019
592019
Pinhole Defect Characterization and Fault Modeling for STT-MRAM Testing
L Wu, S Rao, GC Medeiros, M Taouil, EJ Marinissen, F Yasin, S Couet, ...
2019 IEEE European Test Symposium (ETS), 1-6, 2019
272019
Defect and Fault Modeling Framework for STT-MRAM Testing
L Wu, S Rao, M Taouil, GC Medeiros, M Fieback, EJ Marinissen, GS Kar, ...
IEEE Transactions on Emerging Topics in Computing, 2019
252019
Identification and Rejuvenation of NBTI-Critical Logic Paths in Nanoscale Circuits
M Jenihhin, G Squillero, TS Copetti, V Tihhomirov, S Kostin, M Gaudesi, ...
Journal of Electronic Testing 32 (3), 273-289, 2016
232016
Intermittent Undefined State Fault in RRAMs
M Fieback, GC Medeiros, A Gebregiorgis, H Aziza, M Taouil, S Hamdioui
2021 IEEE European Test Symposium (ETS), 1-6, 2021
212021
Effectiveness of a hardware-based approach to detect resistive-open defects in SRAM cells under process variations
AF Gomez, F Lavratti, G Medeiros, M Sartori, LB Poehls, V Champac, ...
Microelectronics Reliability 67, 150-158, 2016
162016
DFT Scheme for Hard-to-Detect Faults in FinFET SRAMs
GC Medeiros, M Taouil, M Fieback, LB Poehls, S Hamdioui
2019 IEEE European Test Symposium (ETS), 1-2, 2019
142019
Analyzing the behavior of FinFET SRAMs with resistive defects
TS Copetti, TR Balen, GC Medeiros, LMB Poehls
2017 IFIP/IEEE International Conference on Very Large Scale Integration …, 2017
142017
Hard-to-Detect Fault Analysis in FinFET SRAMs
GC Medeiros, M Fieback, L Wu, M Taouil, LMB Poehls, S Hamdioui
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2021
102021
A defect-oriented test approach using on-Chip current sensors for resistive defects in FinFET SRAMs
GC Medeiros, LMB Poehls, M Taouil, FL Vargas, S Hamdioui
Microelectronics Reliability 88, 355-359, 2018
82018
Analyzing NBTI impact on SRAMs with resistive-open defects
MT Martins, G Medeiros, T Copetti, F Vargas, LB Poehls
2016 17th Latin-American Test Symposium (LATS), 87-92, 2016
82016
A DFT Scheme to Improve Coverage of Hard-to-Detect Faults in FinFET SRAMs
GC Medeiros, CC Gürsoy, L Wu, M Fieback, M Jenihhin, M Taouil, ...
2020 Design, Automation & Test in Europe Conference & Exhibition (DATE), 792-797, 2020
62020
Analysing NBTI Impact on SRAMs with Resistive Defects
MT Martins, GC Medeiros, T Copetti, FL Vargas, LMB Poehls
Journal of Electronic Testing 33 (5), 637-655, 2017
62017
Analyzing the Impact of SEUs on SRAMs with Resistive-Bridge Defects
GC Medeiros, LB Poehls, FF Vargas
2016 29th International Conference on VLSI Design and 2016 15th …, 2016
62016
Evaluating the Impact of Temperature on Dynamic Fault Behaviour of FinFET-Based SRAMs with Resistive Defects
GC Medeiros, E Brum, LB Poehls, T Copetti, T Balen
Journal of Electronic Testing 35 (2), 191-200, 2019
52019
Influence of temperature on dynamic fault behavior due to resistive defects in FinFET-based SRAMs
G Medeiros, E Brum, LB Poehls, T Copetti, T Balen
2018 IEEE 19th Latin-American Test Symposium (LATS), 1-6, 2018
52018
Gate-level modelling of NBTI-induced delays under process variations
T Copetti, G Medeiros, LB Poehls, F Vargas, S Kostin, M Jenihhin, J Raik, ...
2016 17th Latin-American Test Symposium (LATS), 75-80, 2016
52016
Detecting random read faults to reduce test escapes in FinFET SRAMs
GC Medeiros, M Fieback, A Gebregiorgis, M Taouil, LB Poehls, ...
2021 IEEE European Test Symposium (ETS), 1-6, 2021
42021
Evaluating the Impact of Ionizing Particles on FinFET-based SRAMs with Weak Resistive Defects
T Copetti, GC Medeiros, M Taouil, S Hamdioui, LB Poehls, T Balen
2020 IEEE Latin-American Test Symposium (LATS), 1-6, 2020
42020
Modeling Soft-Error Reliability Under Variability
A Balakrishnan, GC Medeiros, CC Gürsoy, S Hamdioui, M Jenihhin, ...
2021 IEEE International Symposium on Defect and Fault Tolerance in VLSI and …, 2021
32021
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