Tunneling spin injection into single layer graphene W Han, K Pi, KM McCreary, Y Li, JJI Wong, AG Swartz, RK Kawakami Physical review letters 105 (16), 167202, 2010 | 567 | 2010 |
Electronic doping and scattering by transition metals on graphene K Pi, KM McCreary, W Bao, W Han, YF Chiang, Y Li, SW Tsai, CN Lau, ... Physical Review B 80 (7), 075406, 2009 | 335 | 2009 |
Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications L Thomas, G Jan, J Zhu, H Liu, YJ Lee, S Le, RY Tong, K Pi, YJ Wang, ... Journal of Applied Physics 115 (17), 2014 | 269 | 2014 |
Manipulation of spin transport in graphene by surface chemical doping K Pi, W Han, KM McCreary, AG Swartz, Y Li, RK Kawakami Physical review letters 104 (18), 187201, 2010 | 202 | 2010 |
Spin transport and relaxation in graphene W Han, KM McCreary, K Pi, WH Wang, Y Li, H Wen, JR Chen, ... Journal of Magnetism and Magnetic Materials 324 (4), 369-381, 2012 | 175 | 2012 |
Electrical detection of spin precession in single layer graphene spin valves with transparent contacts W Han, K Pi, W Bao, KM McCreary, Y Li, WH Wang, CN Lau, ... Applied Physics Letters 94 (22), 2009 | 166 | 2009 |
Effect of cluster formation on graphene mobility KM McCreary, K Pi, AG Swartz, W Han, W Bao, CN Lau, F Guinea, ... Physical Review B 81 (11), 115453, 2010 | 146 | 2010 |
Electron-hole asymmetry of spin injection and transport in single-layer graphene W Han, WH Wang, K Pi, KM McCreary, W Bao, Y Li, F Miao, CN Lau, ... Physical Review Letters 102 (13), 137205, 2009 | 145 | 2009 |
Magnetotransport properties of mesoscopic graphite spin valves WH Wang, K Pi, Y Li, YF Chiang, P Wei, J Shi, RK Kawakami Physical Review B 77 (2), 020402, 2008 | 133 | 2008 |
Growth of atomically smooth MgO films on graphene by molecular beam epitaxy WH Wang, W Han, K Pi, KM McCreary, F Miao, W Bao, CN Lau, ... Applied Physics Letters 93 (18), 2008 | 79 | 2008 |
Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, RY Tong, K Pi, YJ Wang, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 77 | 2014 |
Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015 | 71 | 2015 |
Metallic and insulating adsorbates on graphene KM McCreary, K Pi, RK Kawakami Applied Physics Letters 98 (19), 2011 | 69 | 2011 |
Hybridized oxide capping layer for perpendicular magnetic anisotropy K Pi, YJ Wang, RY Tong US Patent 9,147,833, 2015 | 51 | 2015 |
Oxidation-induced biquadratic coupling in co/fe/mgo/fe (001) YF Chiang, JJI Wong, X Tan, Y Li, K Pi, WH Wang, HWK Tom, ... Physical Review B 79 (18), 184410, 2009 | 35 | 2009 |
Growth of single-crystalline, atomically smooth MgO films on Ge (0 0 1) by molecular beam epitaxy W Han, Y Zhou, Y Wang, Y Li, JJI Wong, K Pi, AG Swartz, KM McCreary, ... Journal of crystal growth 312 (1), 44-47, 2009 | 33 | 2009 |
Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM L Thomas, G Jan, S Le, YJ Lee, H Liu, J Zhu, S Serrano-Guisan, RY Tong, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.4. 1-26.4. 4, 2015 | 31 | 2015 |
Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device Applications H Liu, J Zhu, K Pi, RY Tong US Patent App. 14/278,243, 2015 | 25 | 2015 |
Inversion of ferromagnetic proximity polarization by MgO interlayers Y Li, Y Chye, YF Chiang, K Pi, WH Wang, JM Stephens, S Mack, ... Physical review letters 100 (23), 237205, 2008 | 23 | 2008 |
Oscillatory Spin Polarization and Magneto-Optic Kerr Effect in Fe3O4 Thin Films on GaAs (001) Y Li, W Han, AG Swartz, K Pi, JJI Wong, S Mack, DD Awschalom, ... arXiv preprint arXiv:1009.3944, 2010 | 21 | 2010 |