Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2Gate-Insulator and Zr-Based Ohmic Contacts X Hu, S Hwang, K Hussain, R Floyd, S Mollah, F Asif, G Simin, A Khan IEEE Electron Device Letters 39 (10), 1568-1571, 2018 | 38 | 2018 |
Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes R Floyd, M Gaevski, K Hussain, A Mamun, MVS Chandrashekhar, ... Applied Physics Express 14 (8), 084002, 2021 | 29 | 2021 |
Photonics integrated circuits using Al x Ga1− x N based UVC light-emitting diodes, photodetectors and waveguides R Floyd, K Hussain, A Mamun, M Gaevski, G Simin, ... Applied Physics Express 13 (2), 022003, 2020 | 20 | 2020 |
An opto-thermal study of high brightness 280nm emission AlGaN micropixel light-emitting diode arrays R Floyd, M Gaevski, MD Alam, S Islam, K Hussain, A Mamun, S Mollah, ... Applied Physics Express, 2020 | 15 | 2020 |
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric S Mollah, M Gaevski, MVS Chandrashekhar, X Hu, V Wheeler, K Hussain, ... Semiconductor Science and Technology 34 (12), 125001, 2019 | 14 | 2019 |
Current collapse in high-Al channel AlGaN HFETs S Mollah, M Gaevski, K Hussain, A Mamun, R Floyd, X Hu, ... Applied Physics Express 12 (7), 074001, 2019 | 13 | 2019 |
High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer … S Mollah, K Hussain, R Floyd, A Mamun, M Gaevski, ... physica status solidi (a) 217 (7), 1900802, 2020 | 10 | 2020 |
Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders MD Alam, M Gaevski, MU Jewel, S Mollah, A Mamun, K Hussain, R Floyd, ... Applied Physics Letters 119 (13), 2021 | 8 | 2021 |
An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices R Floyd, K Hussain, A Mamun, M Gaevski, G Simin, ... physica status solidi (a) 217 (7), 1900801, 2020 | 5 | 2020 |
High figure of merit extreme bandgap Al0. 87Ga0. 13N-Al0. 64Ga0. 36N heterostructures over bulk AlN substrates K Hussain, A Mamun, R Floyd, MD Alam, ME Liao, K Huynh, Y Wang, ... Applied Physics Express 16 (1), 014005, 2023 | 3 | 2023 |
Al0. 64Ga0. 36N channel MOSHFET on single crystal bulk AlN substrate A Mamun, K Hussain, R Floyd, MDD Alam, MVS Chandrashekhar, ... Applied Physics Express 16 (6), 061001, 2023 | 2 | 2023 |
High-Performance Interconnects with Reduced Far-End Crosstalk for High-Speed ICs and Communication Systems J Ge, R Floyd, A Khan, G Wang IEEE Transactions on Components, Packaging and Manufacturing Technology, 2023 | 1 | 2023 |
Deep-scaling and modular interconnection of deep ultraviolet micro-sized emitters R Floyd, A Khan, M Gaevski, MVS Chandrashekhar, G Simin US Patent App. 17/747,351, 2023 | | 2023 |