Jing Guo
Jing Guo
Verified email at
Cited by
Cited by
Ballistic carbon nanotube field-effect transistors
A Javey, J Guo, Q Wang, M Lundstrom, H Dai
nature 424 (6949), 654-657, 2003
One-Dimensional Electrical Contact to a Two-Dimensional Material
CRD L Wang, I Meric, PY Huang, Q Gao, Y Gao, H Tran, T Taniguchi, K Watanabe ...
Science 342 (6158), 614-617, 2013
N-doping of graphene through electrothermal reactions with ammonia
X Wang, X Li, L Zhang, Y Yoon, PK Weber, H Wang, J Guo, H Dai
science 324 (5928), 768-771, 2009
Atomically thin p–n junctions with van der Waals heterointerfaces
CH Lee, GH Lee, AM Van Der Zande, W Chen, Y Li, M Han, X Cui, ...
Nature nanotechnology 9 (9), 676-681, 2014
Room temperature all semiconducting sub-10nm graphene nanoribbon field-effect transistors
X Wang, Y Ouyang, X Li, H Wang, J Guo, H Dai
arXiv preprint arXiv:0803.3464, 2008
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ...
Nature materials 1 (4), 241-246, 2002
Theory of ballistic nanotransistors
A Rahman, J Guo, S Datta, MS Lundstrom
IEEE Transactions on Electron devices 50 (9), 1853-1864, 2003
Degenerate n-doping of few-layer transition metal dichalcogenides by potassium
H Fang, M Tosun, G Seol, TC Chang, K Takei, J Guo, A Javey
Nano letters 13 (5), 1991-1995, 2013
High-field quasiballistic transport in short carbon nanotubes
A Javey, J Guo, M Paulsson, Q Wang, D Mann, M Lundstrom, H Dai
Physical Review Letters 92 (10), 106804, 2004
Carbon nanotube field-effect transistors with integrated ohmic contacts and high-κ gate dielectrics
A Javey, J Guo, DB Farmer, Q Wang, D Wang, RG Gordon, M Lundstrom, ...
Nano Letters 4 (3), 447-450, 2004
Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays
A Javey, J Guo, DB Farmer, Q Wang, E Yenilmez, RG Gordon, ...
Nano letters 4 (7), 1319-1322, 2004
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2
SB Desai, G Seol, JS Kang, H Fang, C Battaglia, R Kapadia, JW Ager, ...
Nano letters 14 (8), 4592-4597, 2014
Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
T Roy, M Tosun, X Cao, H Fang, DH Lien, P Zhao, YZ Chen, YL Chueh, ...
ACS nano 9 (2), 2071-2079, 2015
High performance n-type carbon nanotube field-effect transistors with chemically doped contacts
A Javey, R Tu, DB Farmer, J Guo, RG Gordon, H Dai
Nano letters 5 (2), 345-348, 2005
Performance limits of monolayer transition metal dichalcogenide transistors
L Liu, SB Kumar, Y Ouyang, J Guo
IEEE Transactions on Electron Devices 58 (9), 3042-3047, 2011
Nanoscale transistors: device physics, modeling and simulation
M Lundstrom, J Guo
Springer Science & Business Media, 2006
Diameter-dependent electron mobility of InAs nanowires
AC Ford, JC Ho, YL Chueh, YC Tseng, Z Fan, J Guo, J Bokor, A Javey
Nano Letters 9 (1), 360-365, 2009
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors
J Guo, S Datta, M Lundstrom
IEEE transactions on electron devices 51 (2), 172-177, 2004
Performance projections for ballistic carbon nanotube field-effect transistors
J Guo, M Lundstrom, S Datta
Applied physics letters 80 (17), 3192-3194, 2002
Toward multiscale modeling of carbon nanotube transistors
J Guo, S Datta, M Lundstrom, MP Anantam
International Journal for Multiscale Computational Engineering 2 (2), 2004
The system can't perform the operation now. Try again later.
Articles 1–20