Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ... 2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013 | 89 | 2013 |
Simple binary ovonic threshold switching material SiTe and its excellent selector performance for high-density memory array application Y Koo, S Lee, S Park, M Yang, H Hwang IEEE Electron Device Letters 38 (5), 568-571, 2017 | 78 | 2017 |
Holistic Archetypes of IT Outsourcing Strategy: A Contingency Fit and Configurational Approach. JN Lee, YK Park, DW Straub, Y Koo MIS quarterly 43 (4), 2019 | 71 | 2019 |
Te-based amorphous binary OTS device with excellent selector characteristics for x-point memory applications Y Koo, K Baek, H Hwang 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 65 | 2016 |
Alignment between internal and external IT governance and its effects on distinctive firm performance: An extended resource-based view J Park, JN Lee, OKD Lee, Y Koo IEEE Transactions on Engineering Management 64 (3), 351-364, 2017 | 60 | 2017 |
Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements J Woo, D Lee, Y Koo, H Hwang Microelectronic Engineering 182, 42-45, 2017 | 49 | 2017 |
Hardware implementation of associative memory characteristics with analogue-type resistive-switching device K Moon, S Park, J Jang, D Lee, J Woo, E Cha, S Lee, J Park, J Song, ... Nanotechnology 25 (49), 495204, 2014 | 47 | 2014 |
Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters Y Koo, H Hwang Scientific Reports 8 (1), 11822, 2018 | 46 | 2018 |
Effects of RESET current overshoot and resistance state on reliability of RRAM J Song, D Lee, J Woo, Y Koo, E Cha, S Lee, J Park, K Moon, SH Misha, ... IEEE electron device letters 35 (6), 636-638, 2014 | 46 | 2014 |
Automatic extraction of inferior alveolar nerve canal using feature-enhancing panoramic volume rendering G Kim, J Lee, H Lee, J Seo, YM Koo, YG Shin, B Kim IEEE Transactions on Biomedical Engineering 58 (2), 253-264, 2010 | 46 | 2010 |
Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory. D Lee, J Park, J Woo, E Cha, S Lee, K Moon, J Song, Y Koo, H Hwang Advanced Materials (Deerfield Beach, Fla.) 27 (1), 59-64, 2014 | 44 | 2014 |
Provision and usage of open government data: strategic transformation paths J Ham, Y Koo, JN Lee Industrial Management & Data Systems 119 (8), 1841-1858, 2019 | 33 | 2019 |
Use of plant and herb derived medicine for therapeutic usage in cardiology YE Koo, J Song, S Bae Medicines 5 (2), 38, 2018 | 27 | 2018 |
Te-based binary OTS selectors with excellent selectivity (>105), endurance (>108) and thermal stability (>450°C) J Yoo, Y Koo, SA Chekol, J Park, J Song, H Hwang 2018 IEEE Symposium on VLSI Technology, 207-208, 2018 | 24 | 2018 |
Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX> 107A/cm2) J Woo, J Song, K Moon, JH Lee, E Cha, A Prakash, D Lee, S Lee, J Park, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 22 | 2014 |
Highly reliable resistive switching without an initial forming operation by defect engineering S Lee, D Lee, J Woo, E Cha, J Park, J Song, K Moon, Y Koo, B Attari, ... IEEE electron device letters 34 (12), 1515-1517, 2013 | 22 | 2013 |
Congruent patterns of outsourcing capabilities: A bilateral perspective Y Koo, YK Park, J Ham, JN Lee The Journal of Strategic Information Systems 28 (4), 101580, 2019 | 20 | 2019 |
Template-based rendering of run-length encoded volumes CH Lee, YM Koo, YG Shin Proceedings The Fifth Pacific Conference on Computer Graphics and …, 1997 | 19 | 1997 |
Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory S Lee, J Woo, D Lee, E Cha, J Park, K Moon, J Song, Y Koo, H Hwang Applied Physics Letters 104 (5), 2014 | 17 | 2014 |
BEOL compatible (300°C) TiN/TiOx/Ta/TiN 3D nanoscale (∼10nm) IMT selector D Lee, J Park, S Park, J Woo, K Moon, E Cha, S Lee, J Song, Y Koo, ... 2013 IEEE International Electron Devices Meeting, 10.7. 1-10.7. 4, 2013 | 15 | 2013 |