Unsupervised learning in probabilistic neural networks with multi-state metal-oxide memristive synapses A Serb, J Bill, A Khiat, R Berdan, R Legenstein, T Prodromakis
Nature communications 7 (1), 12611, 2016
383 2016 Low-power linear computation using nonlinear ferroelectric tunnel junction memristors R Berdan, T Marukame, K Ota, M Yamaguchi, M Saitoh, S Fujii, J Deguchi, ...
Nature Electronics 3 (5), 259-266, 2020
195 2020 Emulating short-term synaptic dynamics with memristive devices R Berdan, E Vasilaki, A Khiat, G Indiveri, A Serb, T Prodromakis
Scientific reports 6 (1), 18639, 2016
163 2016 A -Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays R Berdan, A Serb, A Khiat, A Regoutz, C Papavassiliou, T Prodromakis
IEEE Transactions on Electron Devices 62 (7), 2190-2196, 2015
98 2015 A memristor SPICE model accounting for volatile characteristics of practical ReRAM R Berdan, C Lim, A Khiat, C Papavassiliou, T Prodromakis
IEEE Electron Device Letters 35 (1), 135-137, 2013
76 2013 High precision analogue memristor state tuning R Berdan, T Prodromakis, C Toumazou
Electronics letters 48 (18), 1105-1107, 2012
72 2012 Pulse-induced resistive and capacitive switching in TiO2 thin film devices I Salaoru, A Khiat, Q Li, R Berdan, T Prodromakis
Applied Physics Letters 103 (23), 2013
51 2013 Memristive devices as parameter setting elements in programmable gain amplifiers R Berdan, T Prodromakis, I Salaoru, A Khiat, C Toumazou
Applied Physics Letters 101 (24), 2012
41 2012 Origin of the OFF state variability in ReRAM cells I Salaoru, A Khiat, Q Li, R Berdan, C Papavassiliou, T Prodromakis
Journal of Physics D: Applied Physics 47 (14), 145102, 2014
34 2014 In-memory reinforcement learning with moderately-stochastic conductance switching of ferroelectric tunnel junctions R Berdan, T Marukame, S Kabuyanagi, K Ota, M Saitoh, S Fujii, J Deguchi, ...
2019 Symposium on VLSI Technology, T22-T23, 2019
30 2019 A cell classifier for RRAM process development I Gupta, A Serb, R Berdan, A Khiat, A Regoutz, T Prodromakis
IEEE Transactions on Circuits and Systems II: Express Briefs 62 (7), 676-680, 2015
28 2015 Live demonstration: A versatile, low-cost platform for testing large ReRAM cross-bar arrays A Serb, R Berdan, A Khiat, C Papavassiliou, T Prodromakis
2014 IEEE International Symposium on Circuits and Systems (ISCAS), 441-441, 2014
24 2014 Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-x Zrx O2 Ferroelectric Tunnel Junctions K Ota, M Yamaguchi, R Berdan, T Marukame, Y Nishi, K Matsuo, ...
2019 IEEE International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2019
22 2019 An FPGA-based instrument for en-masse RRAM characterization with ns pulsing resolution J Xing, A Serb, A Khiat, R Berdan, H Xu, T Prodromakis
IEEE Transactions on Circuits and Systems I: Regular Papers 63 (6), 818-826, 2016
18 2016 Applications of solid-state memristors in tunable filters R Wizenberg, A Khiat, R Berdan, C Papavassiliou, T Prodromakis
2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2269-2272, 2014
14 2014 Volatility characterization for RRAM devices I Gupta, A Serb, R Berdan, A Khiat, T Prodromakis
IEEE Electron Device Letters 38 (1), 28-31, 2016
12 2016 Temporal processing with volatile memristors R Berdan, T Prodromakis, A Khiat, I Salaoru, C Toumazou, F Perez-Diaz, ...
2013 IEEE International Symposium on Circuits and Systems (ISCAS), 425-428, 2013
9 2013 Arithmetic apparatus R Berdan, Y Nishi, T Marukame
US Patent 11,150,873, 2021
8 2021 Limitations and precision requirements for read-out of passive, linear, selectorless rram arrays A Serb, W Redman-White, C Papavassiliou, R Berdan, T Prodromakis
2015 IEEE International Symposium on Circuits and Systems (ISCAS), 189-192, 2015
8 2015 Spiking neural net work device and learning method of spiking neural network device Y Nishi, K Nomura, R Berdan, T Marukame
US Patent 11,625,579, 2023
6 2023