| A modular-designed three-phase high-efficiency high-power-density EV battery charger using dual/triple-phase-shift control J Lu, K Bai, AR Taylor, G Liu, A Brown, PM Johnson, M McAmmond IEEE Transactions on Power Electronics 33 (9), 8091-8100, 2017 | 145 | 2017 |
| Parasitic capacitance Eqoss loss mechanism, calculation, and measurement in hard-switching for GaN HEMTs R Hou, J Lu, D Chen 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 919-924, 2018 | 112 | 2018 |
| Applying variable-switching-frequency variable-phase-shift control and E-mode GaN HEMTs to an indirect matrix converter-based EV battery charger J Lu, G Liu, H Bai, A Brown, PM Johnson, M McAmmond, AR Taylor IEEE Transactions on Transportation Electrification 3 (3), 554-564, 2017 | 78 | 2017 |
| Silicon, GaN and SiC: There's room for all: An application space overview of device considerations L Spaziani, L Lu 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 69 | 2018 |
| Paralleling gan e-hemts in 10kw–100kw systems JL Lu, D Chen 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 3049-3056, 2017 | 69 | 2017 |
| A high power-density and high efficiency insulated metal substrate based GaN HEMT power module JL Lu, D Chen, L Yushyna 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 3654-3658, 2017 | 68 | 2017 |
| An indirect matrix converter based 97%-efficiency on-board level 2 battery charger using E-mode GaN HEMTs J Lu, Q Tian, K Bai, A Brown, M McAmmond 2015 IEEE 3rd workshop on wide bandgap power devices and applications (WiPDA …, 2015 | 68 | 2015 |
| Design consideration of gate driver circuits and PCB parasitic parameters of paralleled E-mode GaN HEMTs in zero-voltage-switching applications J Lu, H Bai, A Brown, M McAmmond, D Chen, J Styles 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 529-535, 2016 | 66 | 2016 |
| Comparison of SiC MOSFET‐based and GaN HEMT‐based high‐efficiency high‐power‐density 7.2 kW EV battery chargers A Taylor, J Lu, L Zhu, K Bai, M McAmmond, A Brown IET Power Electronics 11 (11), 1849-1857, 2018 | 64 | 2018 |
| Power loss characterization and modeling for GaN-based hard-switching half-bridges considering dynamic on-state resistance R Hou, Y Shen, H Zhao, H Hu, J Lu, T Long IEEE Transactions on Transportation Electrification 6 (2), 540-553, 2020 | 58 | 2020 |
| Opportunities and design considerations of GaN HEMTs in ZVS applications JL Lu, R Hou, D Chen 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 880-885, 2018 | 43 | 2018 |
| Electric power conversion apparatus with active filter H Bai, LU Juncheng US Patent 9,887,616, 2018 | 39 | 2018 |
| A GaN/Si hybrid T-type three-level configuration for electric vehicle traction inverter J Lu, R Hou, P Di Maso, J Styles 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2018 | 31 | 2018 |
| Hard-switching 650-V GaN HEMTs in an 800-V DC-grid system with no-diode-clamping active-balancing three-level topology W Qian, J Lu, H Bai, S Averitt IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (2 …, 2018 | 30 | 2018 |
| Critical transient processes of enhancement-mode GaN HEMTs in high-efficiency and high-reliability applications L Lu, G Liu, K Bai CES Transactions on Electrical Machines and Systems 1 (3), 283-291, 2017 | 29 | 2017 |
| Device and system-level transient analysis in a modular designed sub-MW EV fast charging station using hybrid GaN HEMTs+ Si MOSFETs J Lu, L Zhu, G Liu, H Bai IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (1), 143-156, 2018 | 27 | 2018 |
| An E-mode GaN HEMTs based three-level bidirectional DC/DC converter used in Robert Bosch DC-grid system J Lu, HK Bai, S Averitt, D Chen, J Styles 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 27 | 2015 |
| A novel light load performance enhanced variable-switching-frequency and hybrid single-dual-phase-shift control for single-stage dual-active-bridge based AC/DC converter Q Tian, AQ Huang, H Bai, J Lu, H Teng, M Mcammond, A Brown IECON 2016-42nd Annual Conference of the IEEE Industrial Electronics Society …, 2016 | 26 | 2016 |
| Loss distribution among paralleled GaN HEMTs J Lu, R Hou, D Chen 2018 IEEE Energy Conversion Congress and Exposition (ECCE), 1914-1919, 2018 | 24 | 2018 |
| Comparison of SiC MOSFETs and GaN HEMTs based high-efficiency high-power-density 7.2 kW EV battery chargers G Liu, KH Bai, M McAmmond, A Brown, PM Johnson, A Taylor, J Lu 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017 | 23 | 2017 |
Hua BaiUniversity of Tennessee, KnoxvilleDirección de correo verificada de utk.edu
