Steven Chuang
Steven Chuang
UC Berkeley
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High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
H Fang, S Chuang, TC Chang, K Takei, T Takahashi, A Javey
Nano letters 12 (7), 3788-3792, 2012
MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ...
Nano letters 14 (3), 1337-1342, 2014
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ...
Nature 468 (7321), 286-289, 2010
High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
M Tosun, S Chuang, H Fang, AB Sachid, M Hettick, Y Lin, Y Zeng, ...
ACS nano 8 (5), 4948-4953, 2014
Hole contacts on transition metal dichalcogenides: Interface chemistry and band alignments
S McDonnell, A Azcatl, R Addou, C Gong, C Battaglia, S Chuang, K Cho, ...
ACS nano 8 (6), 6265-6272, 2014
Ballistic InAs nanowire transistors
S Chuang, Q Gao, R Kapadia, AC Ford, J Guo, A Javey
Nano letters 13 (2), 555-558, 2013
Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films
TJ Ha, K Chen, S Chuang, KM Yu, D Kiriya, A Javey
Nano letters 15 (1), 392-397, 2015
Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors
K Takei, M Madsen, H Fang, R Kapadia, S Chuang, HS Kim, CH Liu, ...
Nano letters 12 (4), 2060-2066, 2012
Ultrathin body InAs tunneling field-effect transistors on Si substrates
AC Ford, CW Yeung, S Chuang, HS Kim, E Plis, S Krishna, C Hu, A Javey
Applied Physics Letters 98 (11), 2011
Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes
S Chuang, R Kapadia, H Fang, T Chia Chang, WC Yen, YL Chueh, ...
Applied Physics Letters 102 (24), 2013
Direct growth of single-crystalline III–V semiconductors on amorphous substrates
K Chen, R Kapadia, A Harker, S Desai, J Seuk Kang, S Chuang, M Tosun, ...
Nature communications 7 (1), 10502, 2016
Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn
AC Ford, S Chuang, JC Ho, YL Chueh, Z Fan, A Javey
Nano letters 10 (2), 509-513, 2010
Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness
K Takei, S Chuang, H Fang, R Kapadia, CH Liu, J Nah, H Sul Kim, E Plis, ...
Applied Physics Letters 99 (10), 2011
Nano Lett.
H Fang, S Chuang, TC Chang, K Takei, T Takahashi, A Javey
Nano Lett 12 (7), 3788-3792, 2012
Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors
H Fang, S Chuang, K Takei, HS Kim, E Plis, CH Liu, S Krishna, YL Chueh, ...
IEEE electron device letters 33 (4), 504-506, 2012
Ultra-thin compound semiconductor on insulator (XOI) for MOSFETs and TFETs
R Kapadia, K Takei, AC Ford, H Fang, S Chuang, M Madsen, S Krishna, ...
69th Device Research Conference, 13-16, 2011
Low Dimensional Materials for Next Generation Electronics
S Chuang
University of California, Berkeley, 2014
Zn Gas-Phase Doping of InAs Nanostructures
S Chuang
Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments (Supporting Information)
S McDonnell, A Azcatl, R Addou, C Gong, C Battaglia, S Chuang, K Cho, ...
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