| Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum KY Lin, HW Wan, KHM Chen, YT Fanchiang, WS Chen, YH Lin, YT Cheng, ... Journal of Crystal Growth 512, 223-229, 2019 | 20 | 2019 |
| Surface electronic structure of epi Germanium (001)-2× 1 YT Cheng, YH Lin, WS Chen, KY Lin, HW Wan, CP Cheng, HH Cheng, ... Applied Physics Express 10 (7), 075701, 2017 | 17 | 2017 |
| Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron … CP Cheng, WS Chen, YT Cheng, HW Wan, CY Yang, TW Pi, J Kwo, ... ACS omega 3 (2), 2111-2118, 2018 | 10 | 2018 |
| Low-temperature grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission YT Cheng, HW Wan, CK Cheng, CP Cheng, JR Kwo, M Hong, TW Pi Applied Physics Express 13 (8), 085504, 2020 | 9 | 2020 |
| In situ Y2O3 on p-In0. 53Ga0. 47As—Attainment of low interfacial trap density and thermal stability at high temperatures YHG Lin, HW Wan, LB Young, J Liu, YT Cheng, KY Lin, YJ Hong, CT Wu, ... Applied Physics Letters 118 (25), 2021 | 8 | 2021 |
| Atomic nature of the Schottky barrier height formation of the Ag/GaAs (001)-2× 4 interface: An in-situ synchrotron radiation photoemission study CP Cheng, WS Chen, KY Lin, GJ Wei, YT Cheng, YH Lin, HW Wan, TW Pi, ... Applied Surface Science 393, 294-298, 2017 | 8 | 2017 |
| Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS HW Wan, YJ Hong, YT Cheng, CK Cheng, CH Hsu, CT Wu, TW Pi, J Kwo, ... ACS Applied Electronic Materials 3 (5), 2164-2169, 2021 | 7 | 2021 |
| Surface electronic structure of Si1− xGex (001)-2× 1: A synchrotron radiation photoemission study YT Cheng, HW Wan, CK Cheng, CP Cheng, J Kwo, M Hong, TW Pi Applied Physics Express 13 (9), 095503, 2020 | 6 | 2020 |
| Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission YT Cheng, HW Wan, CP Cheng, J Kwo, M Hong, TW Pi Nanomaterials 9 (4), 554, 2019 | 5 | 2019 |
| Atom-to-atom interaction of O2 with epi Ge (001)-2× 1 in elucidating GeOx formation YT Cheng, HW Wan, CP Cheng, J Kwo, M Hong, TW Pi Applied Physics Express 11 (11), 115701, 2018 | 5 | 2018 |
| BTI Characterization of MBE Si-capped Ge gate stack and defect reduction via forming gas annealing HW Wan, YJ Hong, YT Cheng, M Hong 2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019 | 4 | 2019 |
| In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge—A comparative study of the interfacial properties and reliability TY Chu, HW Wan, YT Cheng, CK Cheng, YJ Hong, J Kwo, M Hong Japanese Journal of Applied Physics 61 (SC), SC1074, 2022 | 3 | 2022 |
| In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs (0 0 1)-4× 6 surface CP Cheng, WS Chen, YT Cheng, HW Wan, KY Lin, LB Young, CY Yang, ... Journal of Physics D: Applied Physics 51 (40), 405102, 2018 | 3 | 2018 |
| Relevance of GaAs (001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance TW Pi, WS Chen, YH Lin, YT Cheng, GJ Wei, KY Lin, CP Cheng, J Kwo, ... Applied Physics Letters 110 (5), 2017 | 3 | 2017 |
| A Synchrotron Radiation Photoemission Study of SiGe (001)-2× 1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations YT Cheng, HW Wan, J Kwo, M Hong, TW Pi Nanomaterials 12 (8), 1309, 2022 | 2 | 2022 |
| High-Ge-Content Si1–xGex Gate Stacks with Low-Temperature Deposited Ultrathin Epitaxial Si: Growth, Structures, Low Interfacial Traps, and Reliability HW Wan, YT Cheng, CK Cheng, YJ Hong, TY Chu, MT Chang, CH Hsu, ... ACS Applied Electronic Materials 4 (6), 2641-2647, 2022 | 1 | 2022 |
| Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure WH Chang, HW Wan, YT Cheng, YHG Lin, T Irisawa, H Ishii, J Kwo, ... Japanese Journal of Applied Physics 61 (SC), SC1024, 2022 | 1 | 2022 |
| Semiconductor device and manufacturing method thereof WAN Hsien-Wen, YT Cheng, MH Hong, JN Kwo, Y Bo-Yu, H Yu-Jie US Patent 11,245,023, 2022 | 1 | 2022 |
| Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge YT Cheng, HW Wan, TY Chu, TW Pi, J Kwo, M Hong ACS Applied Electronic Materials 3 (10), 4484-4489, 2021 | 1 | 2021 |
| Study of initial growth and band diagram of e-beam evaporated Al2O3/ MBE Al/sapphire using in-situ x-ray photoelectron spectroscopy WS Chen, YT Cheng, YHG Lin, CP Cheng, J Kwo, M Hong Bulletin of the American Physical Society, 2024 | | 2024 |
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