| Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum KY Lin, HW Wan, KHM Chen, YT Fanchiang, WS Chen, YH Lin, YT Cheng, ... Journal of Crystal Growth 512, 223-229, 2019 | 20 | 2019 |
| Perfecting the Al2O3/In0. 53Ga0. 47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer … M Hong, HW Wan, KY Lin, YC Chang, MH Chen, YH Lin, TD Lin, TW Pi, ... Applied Physics Letters 111 (12), 2017 | 20 | 2017 |
| Surface electronic structure of epi Germanium (001)-2× 1 YT Cheng, YH Lin, WS Chen, KY Lin, HW Wan, CP Cheng, HH Cheng, ... Applied Physics Express 10 (7), 075701, 2017 | 17 | 2017 |
| Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs (001) interface HW Wan, YH Lin, KY Lin, TW Chang, RF Cai, J Kwo, M Hong Microelectronic Engineering 178, 154-157, 2017 | 11 | 2017 |
| Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y2O3 on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron … CP Cheng, WS Chen, YT Cheng, HW Wan, CY Yang, TW Pi, J Kwo, ... ACS omega 3 (2), 2111-2118, 2018 | 10 | 2018 |
| Low-temperature grown single-crystal Si on epi Ge (001)-2× 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission YT Cheng, HW Wan, CK Cheng, CP Cheng, JR Kwo, M Hong, TW Pi Applied Physics Express 13 (8), 085504, 2020 | 9 | 2020 |
| In situ Y2O3 on p-In0. 53Ga0. 47As—Attainment of low interfacial trap density and thermal stability at high temperatures YHG Lin, HW Wan, LB Young, J Liu, YT Cheng, KY Lin, YJ Hong, CT Wu, ... Applied Physics Letters 118 (25), 2021 | 8 | 2021 |
| GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3–In comparison with atomic layer deposited Al2O3 HW Wan, KY Lin, CK Cheng, YK Su, WC Lee, CH Hsu, TW Pi, J Kwo, ... Journal of Crystal Growth 477, 179-182, 2017 | 8 | 2017 |
| Atomic nature of the Schottky barrier height formation of the Ag/GaAs (001)-2× 4 interface: An in-situ synchrotron radiation photoemission study CP Cheng, WS Chen, KY Lin, GJ Wei, YT Cheng, YH Lin, HW Wan, TW Pi, ... Applied Surface Science 393, 294-298, 2017 | 8 | 2017 |
| Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS HW Wan, YJ Hong, YT Cheng, CK Cheng, CH Hsu, CT Wu, TW Pi, J Kwo, ... ACS Applied Electronic Materials 3 (5), 2164-2169, 2021 | 7 | 2021 |
| Surface electronic structure of Si1− xGex (001)-2× 1: A synchrotron radiation photoemission study YT Cheng, HW Wan, CK Cheng, CP Cheng, J Kwo, M Hong, TW Pi Applied Physics Express 13 (9), 095503, 2020 | 6 | 2020 |
| Exciton Localization of High-Quality ZnO/MgxZn1–xO Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer WR Liu, WL Huang, YC Wu, LH Lai, CH Hsu, WF Hsieh, TH Chiang, ... ACS Applied Nano Materials 1 (8), 3829-3836, 2018 | 6 | 2018 |
| Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric LB Young, J Liu, YHG Lin, HW Wan, LS Chiang, J Kwo, M Hong Japanese Journal of Applied Physics 61 (SC), SC1018, 2022 | 5 | 2022 |
| Semiconductor device and manufacturing method thereof MH Hong, JN Kwo, YH Lin, KY Lin, Y Bo-Yu, WAN Hsien-Wen US Patent 10,748,774, 2020 | 5 | 2020 |
| Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission YT Cheng, HW Wan, CP Cheng, J Kwo, M Hong, TW Pi Nanomaterials 9 (4), 554, 2019 | 5 | 2019 |
| Atom-to-atom interaction of O2 with epi Ge (001)-2× 1 in elucidating GeOx formation YT Cheng, HW Wan, CP Cheng, J Kwo, M Hong, TW Pi Applied Physics Express 11 (11), 115701, 2018 | 5 | 2018 |
| BTI Characterization of MBE Si-capped Ge gate stack and defect reduction via forming gas annealing HW Wan, YJ Hong, YT Cheng, M Hong 2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019 | 4 | 2019 |
| Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs (001) KY Lin, LB Young, CK Cheng, KH Chen, YH Lin, HW Wan, RF Cai, SC Lo, ... Microelectronic engineering 178, 271-274, 2017 | 4 | 2017 |
| In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge—A comparative study of the interfacial properties and reliability TY Chu, HW Wan, YT Cheng, CK Cheng, YJ Hong, J Kwo, M Hong Japanese Journal of Applied Physics 61 (SC), SC1074, 2022 | 3 | 2022 |
| Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition LB Young, CK Cheng, KY Lin, YH Lin, HW Wan, RF Cai, SC Lo, MY Li, ... Crystal Growth & Design 19 (4), 2030-2036, 2019 | 3 | 2019 |
M. HongNatl Taiwan Univ. Bell LaboratoriesDirección de correo verificada de phys.ntu.edu.tw
