Seguir
Samuel Aldana Delgado
Samuel Aldana Delgado
Postdoctoral research fellow in Tyndall National Institute
Dirección de correo verificada de tyndall.ie - Página principal
Título
Citado por
Citado por
Año
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
712017
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ...
Journal of Physics D: Applied Physics 53 (22), 225106, 2020
672020
Facile synthesis of magnetic agarose microfibers by directed self-assembly in W/O emulsions
S Aldana, F Vereda, R Hidalgo-Alvarez, J de Vicente
Polymer 93, 61-64, 2016
512016
Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
A Rodriguez-Fernandez, S Aldana, F Campabadal, J Sune, E Miranda, ...
IEEE Transactions on Electron Devices 64 (8), 3159-3166, 2017
352017
Kinetic Monte Carlo analysis of data retention in Al: HfO2-based resistive random access memories
S Aldana, E Pérez, F Jiménez-Molinos, C Wenger, JB Roldán
Semiconductor Science and Technology 35 (11), 115012, 2020
312020
An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach
S Aldana, JB Roldán, P García-Fernández, J Suñe, R Romero-Zaliz, ...
Journal of Applied Physics 123 (15), 2018
282018
Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective
D Maldonado, S Aldana, MB Gonzalez, F Jiménez-Molinos, MJ Ibáñez, ...
Microelectronic Engineering 257, 111736, 2022
232022
Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides
M Cazorla, S Aldana, M Maestro, MB González, F Campabadal, E Moreno, ...
Journal of Vacuum Science & Technology B 37 (1), 2019
192019
An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
D Maldonado, C Aguilera-Pedregosa, G Vinuesa, H García, S Dueñas, ...
Chaos, Solitons & Fractals 160, 112247, 2022
132022
Parameter extraction techniques for the analysis and modeling of resistive memories
D Maldonado, S Aldana, MB González, F Jiménez-Molinos, ...
Microelectronic Engineering 265, 111876, 2022
122022
Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández, R Romero-Zaliz, F Jiménez-Molinos, ...
Journal of Vacuum Science & Technology B 36 (6), 2018
102018
Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors
MB González, M Maestro-Izquierdo, F Campabadal, S Aldana, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020
82020
Unravelling the Data Retention Mechanisms under Thermal Stress on 2D Memristors
S Aldana, H Zhang
ACS omega 8 (30), 27543-27552, 2023
32023
On the switching mechanism and optimisation of ion irradiation enabled 2D memristors
S Aldana, J Jadwiszczak, H Zhang
Nanoscale 15, 6408-6416, 2023
32023
A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO2/Si RRAMs
S Aldana, P Garcia-Fernandez, R Romero-Zaliz, MB Gonzalez, ...
2018 Spanish Conference on Electron Devices (CDE), 1-4, 2018
32018
Synaptic devices based on HfO2 memristors
MB González, M Maestro-Izquierdo, S Poblador, M Zabala, ...
Mem-elements for Neuromorphic Circuits with Artificial Intelligence …, 2021
12021
Understanding Substrate Effects on Two-Dimensional MoS2 Growth: a Kinetic Monte Carlo Approach
S Aldana, I Spiridon, L Wang, H Zhang
arXiv preprint arXiv:2401.01661, 2024
2024
A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
D Maldonado, G Vinuesa, S Aldana, FL Aguirre, A Cantudo, H García, ...
Materials Science in Semiconductor Processing 169, 107878, 2024
2024
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–18