A single-stage LED driver based on BCM boost circuit and $ LLC $ converter for street lighting system Y Wang, Y Guan, K Ren, W Wang, D Xu
IEEE transactions on industrial electronics 62 (9), 5446-5457, 2015
143 2015 Compact physical models for AlGaN/GaN MIS-FinFET on threshold voltage and saturation current K Ren, YC Liang, CF Huang
IEEE Transactions on Electron Devices 65 (4), 1348-1354, 2018
23 2018 Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage Z Wang, W Chen, F Wang, J Cao, R Sun, K Ren, Y Luo, S Guo, Z Wang, ...
Superlattices and Microstructures 117, 330-335, 2018
18 2018 Performance evaluation of electric spring: Effect of load variation on voltage regulation B Sen, R Kailin, R Sharma, J Soni, SK Panda
2016 IEEE International Conference on Sustainable Energy Technologies (ICSET …, 2016
16 2016 Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model K Ren, YC Liang, CF Huang
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016
15 2016 A review on micro-LED display integrating metasurface structures Z Liu, K Ren, G Dai, J Zhang
Micromachines 14 (7), 1354, 2023
11 2023 An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes CY Chang, YC Li, K Ren, YC Liang, CF Huang
IEEE Journal of the Electron Devices Society 8, 346-349, 2020
8 2020 Research on Simulation Design of MOS Driver for Micro-LED X Zhang, L Yin, K Ren, J Zhang
Electronics 11 (13), 2044, 2022
4 2022 A novel LED driver based on single-stage LLC resonant converter Y Wang, J Sun, Y Guan, KL Ren, W Wang, D Xu
PCIM Asia 2015; International Exhibition and Conference for Power …, 2015
4 2015 Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors K Ren, YC Liang, CF Huang
Applied Physics Letters 115 (26), 2019
3 2019 Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review X Zou, J Yang, Q Qiao, X Zou, J Chen, Y Shi, K Ren
Micromachines 14 (11), 2044, 2023
2 2023 A Compact AR-HUD System Based on 1-D Pupil Expansion Diffractive Waveguide H Yang, G Dai, K Ren, L Yin, J Zhang
2023 Asia Communications and Photonics Conference/2023 International …, 2023
1 2023 A Novel Field-Plated Lateral -Ga O MOSFET Featuring Self-Aligned Vertical Gate Structure M Gao, H Huang, L Yin, X Lu, J Zhang, K Ren
IEEE Transactions on Electron Devices, 2023
1 2023 A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts W Lu, K Ren, Y An, Z Wu, L Yin, J Zhang
2022 19th China International Forum on Solid State Lighting & 2022 8th …, 2023
1 2023 Simulation Study on the Size Effect and Transient Characteristics of Micro-LEDs Z Wu, K Ren, Y An, L Yin, X Lu, A Guo, J Zhang
2022 19th China International Forum on Solid State Lighting & 2022 8th …, 2023
1 2023 A Novel Monolithically Integrated Structure of GaN-based Micro-LED and its Driver HEMT Y An, K Ren, X Xiu, Z Xu, Z Wu, L Yin, J Zhang
2021 18th China International Forum on Solid State Lighting & 2021 7th …, 2021
1 2021 Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device L Xia, K Ren, CF Huang, YC Liang
Applied Physics Letters 118 (16), 2021
1 2021 Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current L Yin, S Wu, K Ren, W Zhang, J Zhang
Microelectronics Journal 145, 106121, 2024
2024 Compact pupil-expansion AR-HUD based on surface-relief grating G Dai, H Yang, L Yin, K Ren, J Liu, X Zhang, J Zhang
Optics Express 32 (5), 6917-6928, 2024
2024 A Novel AlGaN/GaN Lateral Bipolar Junction Transistor Exploiting Polarization Effects K Ren, Y Shi, X Zou, L Yin, J Zhang
IEEE Transactions on Electron Devices, 2023
2023