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Kailin Ren
Kailin Ren
Dirección de correo verificada de u.nus.edu
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A single-stage LED driver based on BCM boost circuit and $ LLC $ converter for street lighting system
Y Wang, Y Guan, K Ren, W Wang, D Xu
IEEE transactions on industrial electronics 62 (9), 5446-5457, 2015
1432015
Compact physical models for AlGaN/GaN MIS-FinFET on threshold voltage and saturation current
K Ren, YC Liang, CF Huang
IEEE Transactions on Electron Devices 65 (4), 1348-1354, 2018
232018
Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage
Z Wang, W Chen, F Wang, J Cao, R Sun, K Ren, Y Luo, S Guo, Z Wang, ...
Superlattices and Microstructures 117, 330-335, 2018
182018
Performance evaluation of electric spring: Effect of load variation on voltage regulation
B Sen, R Kailin, R Sharma, J Soni, SK Panda
2016 IEEE International Conference on Sustainable Energy Technologies (ICSET …, 2016
162016
Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model
K Ren, YC Liang, CF Huang
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016
152016
A review on micro-LED display integrating metasurface structures
Z Liu, K Ren, G Dai, J Zhang
Micromachines 14 (7), 1354, 2023
112023
An AlGaN/GaN high electron mobility transistor with a built-in light emitter using radiative recombination of two-dimensional electron gas and holes
CY Chang, YC Li, K Ren, YC Liang, CF Huang
IEEE Journal of the Electron Devices Society 8, 346-349, 2020
82020
Research on Simulation Design of MOS Driver for Micro-LED
X Zhang, L Yin, K Ren, J Zhang
Electronics 11 (13), 2044, 2022
42022
A novel LED driver based on single-stage LLC resonant converter
Y Wang, J Sun, Y Guan, KL Ren, W Wang, D Xu
PCIM Asia 2015; International Exhibition and Conference for Power …, 2015
42015
Physical mechanism on the suppression of dynamic resistance degradation by multi-mesa-channel in AlGaN/GaN high electron mobility transistors
K Ren, YC Liang, CF Huang
Applied Physics Letters 115 (26), 2019
32019
Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
X Zou, J Yang, Q Qiao, X Zou, J Chen, Y Shi, K Ren
Micromachines 14 (11), 2044, 2023
22023
A Compact AR-HUD System Based on 1-D Pupil Expansion Diffractive Waveguide
H Yang, G Dai, K Ren, L Yin, J Zhang
2023 Asia Communications and Photonics Conference/2023 International …, 2023
12023
A Novel Field-Plated Lateral -GaO MOSFET Featuring Self-Aligned Vertical Gate Structure
M Gao, H Huang, L Yin, X Lu, J Zhang, K Ren
IEEE Transactions on Electron Devices, 2023
12023
A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts
W Lu, K Ren, Y An, Z Wu, L Yin, J Zhang
2022 19th China International Forum on Solid State Lighting & 2022 8th …, 2023
12023
Simulation Study on the Size Effect and Transient Characteristics of Micro-LEDs
Z Wu, K Ren, Y An, L Yin, X Lu, A Guo, J Zhang
2022 19th China International Forum on Solid State Lighting & 2022 8th …, 2023
12023
A Novel Monolithically Integrated Structure of GaN-based Micro-LED and its Driver HEMT
Y An, K Ren, X Xiu, Z Xu, Z Wu, L Yin, J Zhang
2021 18th China International Forum on Solid State Lighting & 2021 7th …, 2021
12021
Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device
L Xia, K Ren, CF Huang, YC Liang
Applied Physics Letters 118 (16), 2021
12021
Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current
L Yin, S Wu, K Ren, W Zhang, J Zhang
Microelectronics Journal 145, 106121, 2024
2024
Compact pupil-expansion AR-HUD based on surface-relief grating
G Dai, H Yang, L Yin, K Ren, J Liu, X Zhang, J Zhang
Optics Express 32 (5), 6917-6928, 2024
2024
A Novel AlGaN/GaN Lateral Bipolar Junction Transistor Exploiting Polarization Effects
K Ren, Y Shi, X Zou, L Yin, J Zhang
IEEE Transactions on Electron Devices, 2023
2023
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Artículos 1–20