Seguir
James A. Bain
James A. Bain
Professor of ECE, Carnegie Mellon University
Dirección de correo verificada de ece.cmu.edu
Título
Citado por
Citado por
Año
Stress determination in textured thin films using X-ray diffraction
BM Clemens, JA Bain
MRS bulletin 17 (7), 46-51, 1992
1931992
Single-chip computers with microelectromechanical systems-based magnetic memory
LR Carley, JA Bain, GK Fedder, DW Greve, DF Guillou, MSC Lu, ...
Journal of applied physics 87 (9), 6680-6685, 2000
1802000
Influence of stress and texture on soft magnetic properties of thin films
P Zou, W Yu, JA Bain
IEEE Transactions on Magnetics 38 (5), 3501-3520, 2002
1442002
Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching
W Jiang, M Noman, YM Lu, JA Bain, PA Salvador, M Skowronski
Journal of Applied Physics 110 (3), 2011
1322011
Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO2/TiO2 Devices
D Li, AA Sharma, DK Gala, N Shukla, H Paik, S Datta, DG Schlom, ...
ACS applied materials & interfaces 8 (20), 12908-12914, 2016
1232016
Imaging of quantized magnetostatic modes using spatially resolved ferromagnetic resonance
S Tamaru, JA Bain, RJM Van de Veerdonk, TM Crawford, M Covington, ...
Journal of Applied Physics 91 (10), 8034-8036, 2002
1062002
Oxygen Vacancy Creation, Drift, and Aggregation in TiO2‐Based Resistive Switches at Low Temperature and Voltage
J Kwon, AA Sharma, JA Bain, YN Picard, M Skowronski
Advanced Functional Materials 25 (19), 2876-2883, 2015
962015
Imaging of optical field confinement in ridge waveguides fabricated on very-small-aperture laser
F Chen, A Itagi, JA Bain, DD Stancil, TE Schlesinger, L Stebounova, ...
Applied physics letters 83 (16), 3245-3247, 2003
962003
Acousto-optical modulation of thin film lithium niobate waveguide devices
L Cai, A Mahmoud, M Khan, M Mahmoud, T Mukherjee, J Bain, G Piazza
Photonics Research 7 (9), 1003-1013, 2019
952019
Elastic strains and coherency stresses in Mo/Ni multilayers
JA Bain, LJ Chyung, S Brennan, BM Clemens
Physical Review B 44 (3), 1184, 1991
901991
Electronic instabilities leading to electroformation of binary metal oxide‐based resistive switches
AA Sharma, M Noman, M Abdelmoula, M Skowronski, JA Bain
Advanced Functional Materials 24 (35), 5522-5529, 2014
892014
Phase coupling and control of oxide-based oscillators for neuromorphic computing
AA Sharma, JA Bain, JA Weldon
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
872015
12.5 THz Fco GeTe inline phase-change switch technology for reconfigurable RF and switching applications
N El-Hinnawy, P Borodulin, EB Jones, BP Wagner, MR King, JS Mason, ...
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2014
792014
Oscillatory neural networks based on TMO nano-oscillators and multi-level RRAM cells
TC Jackson, AA Sharma, JA Bain, JA Weldon, L Pileggi
IEEE journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …, 2015
782015
Low resistance, high dynamic range reconfigurable phase change switch for radio frequency applications
EK Chua, LP Shi, R Zhao, KG Lim, TC Chong, TE Schlesinger, JA Bain
Applied Physics Letters 97 (18), 2010
772010
Design criteria in sizing phase-change RF switches
G Slovin, M Xu, R Singh, TE Schlesinger, J Paramesh, JA Bain
IEEE transactions on microwave theory and techniques 65 (11), 4531-4540, 2017
752017
Computational investigations into the operating window for memristive devices based on homogeneous ionic motion
M Noman, W Jiang, PA Salvador, M Skowronski, JA Bain
Applied Physics A 102, 877-883, 2011
712011
Application of image processing to characterize patterning noise in self-assembled nano-masks for bit-patterned media
S Nabavi, BVKV Kumar, JA Bain, C Hogg, SA Majetich
IEEE transactions on magnetics 45 (10), 3523-3526, 2009
702009
High frequency initial permeability of NiFe and FeAlN
WP Jayasekara, JA Bain, MH Kryder
IEEE transactions on magnetics 34 (4), 1438-1440, 1998
691998
AlN barriers for capacitance reduction in phase-change RF switches
G Slovin, M Xu, J Paramesh, TE Schlesinger, JA Bain
IEEE Electron Device Letters 37 (5), 568-571, 2016
682016
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20