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Hui Fang
Hui Fang
Associate Professor, Dartmouth College
Verified email at dartmouth.edu - Homepage
Title
Cited by
Cited by
Year
High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
H Fang, S Chuang, TC Chang, K Takei, T Takahashi, A Javey
Nano letters 12 (7), 3788-3792, 2012
20192012
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
H Fang, C Battaglia, C Carraro, S Nemsak, B Ozdol, JS Kang, HA Bechtel, ...
Proceedings of the National Academy of Sciences 111 (17), 6198-6202, 2014
11832014
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
H Fang, M Tosun, G Seol, TC Chang, K Takei, J Guo, A Javey
Nano letters 13 (5), 1991-1995, 2013
8342013
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2
SB Desai, G Seol, JS Kang, H Fang, C Battaglia, R Kapadia, JW Ager, ...
Nano letters 14 (8), 4592-4597, 2014
7322014
Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
T Roy, M Tosun, X Cao, H Fang, DH Lien, P Zhao, YZ Chen, YL Chueh, ...
ACS nano 9 (2), 2071-2079, 2015
6992015
MoS2 P-type Transistors and Diodes Enabled by High Work Function MoO x Contacts
S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ...
Nano letters 14 (3), 1337-1342, 2014
6372014
Bioresorbable silicon electronics for transient spatiotemporal mapping of electrical activity from the cerebral cortex
KJ Yu, D Kuzum, SW Hwang, BH Kim, H Juul, NH Kim, SM Won, K Chiang, ...
Nature materials 15 (7), 782-791, 2016
4832016
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ...
Nature 468 (7321), 286-289, 2010
4742010
High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
M Tosun, S Chuang, H Fang, AB Sachid, M Hettick, Y Lin, Y Zeng, ...
ACS nano 8 (5), 4948-4953, 2014
3472014
Metal-catalyzed crystallization of amorphous carbon to graphene
M Zheng, K Takei, B Hsia, H Fang, X Zhang, N Ferralis, H Ko, YL Chueh, ...
Applied Physics Letters 96 (6), 2010
3242010
Capacitively coupled arrays of multiplexed flexible silicon transistors for long-term cardiac electrophysiology
H Fang, KJ Yu, C Gloschat, Z Yang, E Song, CH Chiang, J Zhao, SM Won, ...
Nature biomedical engineering 1 (3), 0038, 2017
2802017
Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems
H Fang, J Zhao, KJ Yu, E Song, AB Farimani, CH Chiang, X Jin, Y Xue, ...
Proceedings of the National Academy of Sciences 113 (42), 11682-11687, 2016
2182016
Development of a neural interface for high-definition, long-term recording in rodents and nonhuman primates
CH Chiang, SM Won, AL Orsborn, KJ Yu, M Trumpis, B Bent, C Wang, ...
Science translational medicine 12 (538), eaay4682, 2020
1712020
Transparent arrays of bilayer-nanomesh microelectrodes for simultaneous electrophysiology and two-photon imaging in the brain
Y Qiang, P Artoni, KJ Seo, S Culaclii, V Hogan, X Zhao, Y Zhong, X Han, ...
Science Advances 4 (9), eaat0626, 2018
1472018
Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
K Takei*, H Fang*, SB Kumar*, R Kapadia, Q Gao, M Madsen, HS Kim, ...
Nano letters 11 (11), 5008-5012, 2011
1212011
Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors
K Takei, M Madsen, H Fang, R Kapadia, S Chuang, HS Kim, CH Liu, ...
Nano letters 12 (4), 2060, 2012
1162012
III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates
J Nah*, H Fang*, C Wang, K Takei, MH Lee, E Plis, S Krishna, A Javey
Nano letters 12 (7), 3592-3595, 2012
1142012
Quantum of optical absorption in two-dimensional semiconductors
H Fang, HA Bechtel, E Plis, MC Martin, S Krishna, E Yablonovitch, ...
Proceedings of the National Academy of Sciences 110 (29), 11688-11691, 2013
1122013
Materials and processing approaches for foundry-compatible transient electronics
JK Chang, H Fang, CA Bower, E Song, X Yu, JA Rogers
Proceedings of the National Academy of Sciences 114 (28), E5522-E5529, 2017
1082017
Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates
C Wang, JC Chien, H Fang, K Takei, J Nah, E Plis, S Krishna, ...
Nano letters 12 (8), 4140-4145, 2012
1072012
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