Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum KY Lin, HW Wan, KHM Chen, YT Fanchiang, WS Chen, YH Lin, YT Cheng, ...
Journal of Crystal Growth 512, 223-229, 2019
20 2019 Analysis of border and interfacial traps in ALD-Y2O3 and-Al2O3 on GaAs via electrical responses-A comparative study TW Chang, KY Lin, YH Lin, LB Young, J Kwo, M Hong
Microelectronic Engineering 178, 199-203, 2017
13 2017 In situ Y2 O3 on p -In0.53 Ga0.47 As—Attainment of low interfacial trap density and thermal stability at high temperaturesYHG Lin, HW Wan, LB Young, J Liu, YT Cheng, KY Lin, YJ Hong, CT Wu, ...
Applied Physics Letters 118 (25), 252104, 2021
8 2021 Enormous Berry-Curvature-Based Anomalous Hall Effect in Topological Insulator (Bi,Sb)2 Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K WJ Zou, MX Guo, JF Wong, ZP Huang, JM Chia, WN Chen, SX Wang, ...
ACS nano 16 (2), 2369-2380, 2022
7 2022 Interfacial characteristics of Y2O3/GaSb (001) grown by molecular beam epitaxy and atomic layer deposition YH Lin, KY Lin, WJ Hsueh, LB Young, TW Chang, JI Chyi, TW Pi, J Kwo, ...
Journal of Crystal Growth 477, 164-168, 2017
7 2017 Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric LB Young, J Liu, YHG Lin, HW Wan, LS Chiang, J Kwo, M Hong
Japanese Journal of Applied Physics 61 (SC), SC1018, 2022
5 2022 Semiconductor device and manufacturing method thereof Ming-Hwei Hong, Juei-Nai Kwo, Yen-Hsun Lin, Keng-Yung Lin, YANG Bo-Yu, WAN ...
US Patent 10,748,774, 2020
5 2020 Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs (001) KY Lin, LB Young, CK Cheng, KH Chen, YH Lin, HW Wan, RF Cai, SC Lo, ...
Microelectronic engineering 178, 271-274, 2017
4 2017 Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition LB Young, CK Cheng, KY Lin, YH Lin, HW Wan, RF Cai, SC Lo, MY Li, ...
Crystal Growth & Design 19 (4), 2030-2036, 2019
3 2019 In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs (0 0 1)-4× 6 surface CP Cheng, WS Chen, YT Cheng, HW Wan, KY Lin, LB Young, CY Yang, ...
Journal of Physics D: Applied Physics 51 (40), 405102, 2018
3 2018 Demonstration of large field effect in topological insulator films via a high-κ back gate CY Wang, HY Lin, SR Yang, KHM Chen, YH Lin, KH Chen, LB Young, ...
Applied Physics Letters 108 (20), 202403, 2016
3 2016 Material having single crystal perovskite, device including the same, and manufacturing method thereof YANG Bo-Yu, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin, WAN ...
US Patent 10,755,924, 2020
2 2020 Fundamental Understanding of Oxide Defects in HfO2 and Y2 O3 on GaAs(001) with High Thermal Stability HW Wan, YJ Hong, LB Young, M Hong, J Kwo
2019 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2019
2 2019 Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs (111) A and (001) using atomic layer deposition CK Cheng, LB Young, KY Lin, YH Lin, HW Wan, GJ Lu, MT Chang, ...
Microelectronic Engineering 178, 125-127, 2017
2 2017 Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs (111) A LB Young, CK Cheng, GJ Lu, KY Lin, YH Lin, HW Wan, MY Li, RF Cai, ...
Journal of Vacuum Science & Technology A 35 (1), 2017
2 2017 Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2 O3 /GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation WS Chen, KY Lin, YHG Lin, HW Wan, LB Young, CP Cheng, TW Pi, J Kwo, ...
ACS Applied Electronic Materials 5 (7), 3809-3816, 2023
1 2023 Enormous Berry-Curvature-Driven Anomalous Hall Effect in Topological Insulator (Bi, Sb) 2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K WJ Zou, MX Guo, JF Wong, ZP Huang, JM Chia, WN Chen, SX Wang, ...
arXiv preprint arXiv:2103.16487, 2021
1 2021 Microstrip resonators with internal quality factors over one million made from MBE-Al films capped with an in-situ deposited oxide layer KH Lai, YHG Lin, L Young, WS Chen, CK Cheng, WJ Yan, YH Lin, J Kwo, ...
Bulletin of the American Physical Society, 2024
2024 Attainment of SS< 10 mV/dec at 4 K in in-situ passivated planar bulk GaAs MOSFETs: alternative cryogenic electronics L Young, J Liu, HW Wan, YHG Lin, YT Cheng, BY Chen, KM Chen, ...
Bulletin of the American Physical Society, 2024
2024 Electrically sign-reversible topological Hall effect in a top-gated topological insulator JF Wong, KHM Chen, JM Chia, ZP Huang, SX Wang, PT Chen, LB Young, ...
Physical Review B 109 (2), 024432, 2024
2024 
M. HongNatl Taiwan Univ. Bell LaboratoriesDirección de correo verificada de phys.ntu.edu.tw
