| In situ Y2O3 on p-In0. 53Ga0. 47As—Attainment of low interfacial trap density and thermal stability at high temperatures YHG Lin, HW Wan, LB Young, J Liu, YT Cheng, KY Lin, YJ Hong, CT Wu, ... Applied Physics Letters 118 (25), 2021 | 8 | 2021 |
| Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric LB Young, J Liu, YHG Lin, HW Wan, LS Chiang, J Kwo, M Hong Japanese Journal of Applied Physics 61 (SC), SC1018, 2022 | 5 | 2022 |
| Effective passivation of p-and n-type In0. 53Ga0. 47As in achieving low leakage current, low interfacial traps, and low border traps YHG Lin, HW Wan, LB Young, KH Lai, J Liu, YT Cheng, J Kwo, M Hong Journal of Applied Physics 135 (1), 2024 | | 2024 |
| GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation J Liu, LB Young, YHG Lin, HW Wan, YT Cheng, J Kwo, M Hong Japanese Journal of Applied Physics 62 (12), 121002, 2023 | | 2023 |
