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Rikmantra Basu
Rikmantra Basu
Assistant Proffessor of Electronics and Communication Engineering, National Institute of Technology
Verified email at nitdelhi.ac.in
Title
Cited by
Cited by
Year
Design and modeling of GeSn-based heterojunction phototransistors for communication applications
GE Chang, R Basu, B Mukhopadhyay, PK Basu
IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 425-433, 2016
812016
Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 µm
R Basu, V Chakraborty, B Mukhopadhyay, PK Basu
2013 International Conference on Microwave and Photonics (ICMAP), 1-5, 2013
40*2013
Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 μm
40*
Semiconductor Laser Theory
BMRB P. K. Basu
CRC Press, Boca Raton, FL, USA., 2016
37*2016
Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnx Alloy
B Mukhopadhyay, G Sen, R Basu, S Mukhopadhyay, PK Basu
physica status solidi (b) 254 (11), 1700244, 2017
332017
Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base
WT Hung, D Barshilia, R Basu, HH Cheng, GE Chang
Optics Letters 45 (5), 1088-1091, 2020
312020
Optimized Ge1−xSnx/Ge Multiple-Quantum-Well Heterojunction Phototransistors for High-Performance SWIR Photodetection
AK Pandey, R Basu, GE Chang
IEEE Sensors Journal 18 (14), 5842-5852, 2018
262018
Estimated threshold base current and light power output of a transistor laser with InGaAs quantum well in GaAs base
R Basu, B Mukhopadhyay, PK Basu
Semiconductor science and technology 26 (10), 105014, 2011
252011
Modeling resonance-free modulation response in transistor lasers with single and multiple quantum wells in the base
R Basu, B Mukhopadhyay, PK Basu
IEEE Photonics Journal 4 (5), 1572-1581, 2012
242012
Comprehensive analysis and optimal design of Ge/GeSn/Ge pnp infrared heterojunction phototransistors
AK Pandey, R Basu, H Kumar, GE Chang
IEEE Journal of the Electron Devices Society 7, 118-126, 2018
222018
Analytical model for threshold-base current of a transistor laser with multiple quantum wells in the base
R Basu, B Mukhopadhyay, PK Basu
IET Optoelectronics 7 (3), 71-76, 2013
192013
Fluoride glass-based surface plasmon resonance sensor in infrared region: Performance evaluation
AK Pandey, AK Sharma, R Basu
Journal of Physics D: Applied Physics 50 (18), 185103, 2017
172017
Effect of Defects on the Performance of Si-based GeSn/Ge Mid-Infrared Phototransistors
HKR Basu
IEEE Sensors Journal, 2021
15*2021
Effect of defects on the performance of Si-based GeSn/Ge mid-infrared phototransistors
H Kumar, R Basu
IEEE Sensors Journal 21 (5), 5975-5982, 2020
152020
Simulation and performance evaluation of fiber optic sensor for detection of hepatic malignancies in human liver tissues
AK Sharma, J Gupta, R Basu
Optics & Laser Technology 98, 291-297, 2018
152018
Temperature analysis of a dopingless TFET considering interface trap charges for enhanced reliability
BK Suruchi Sharma, Rikmantra Basu
IEEE Transaction on Electron Devices, 2022
142022
Current gain and external quantum efficiency modeling of GeSn based direct bandgap multiple quantum well heterojunction phototransistor
V Chakraborty, S Dey, R Basu, B Mukhopadhyay, PK Basu
Optical and Quantum Electronics 49 (3), 1-13, 2017
142017
A weighted ensemble model for prediction of infectious diseases
K Shashvat, R Basu, AP Bhondekar, A Kaur
Current Pharmaceutical Biotechnology 20 (8), 674-678, 2019
132019
Noise analysis of group IV material-based heterojunction phototransistor for fiber-optic telecommunication networks
H Kumar, R Basu
IEEE Sensors Journal 18 (22), 9180-9187, 2018
132018
Effect of Active Layer Scaling on the Performance of Ge1–xSnx Phototransistors
H Kumar, R Basu
IEEE Transactions on Electron Devices 66 (9), 3867-3873, 2019
122019
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