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Rikmantra Basu
Rikmantra Basu
Assistant Proffessor of Electronics and Communication Engineering, National Institute of Technology
Verified email at nitdelhi.ac.in
Title
Cited by
Cited by
Year
Design and modeling of GeSn-based heterojunction phototransistors for communication applications
GE Chang, R Basu, B Mukhopadhyay, PK Basu
IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 425-433, 2016
812016
Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 Ám
R Basu, V Chakraborty, B Mukhopadhyay, PK Basu
2013 International Conference on Microwave and Photonics (ICMAP), 1-5, 2013
40*2013
Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 μm
40*
Semiconductor Laser Theory
BMRB P. K. Basu
CRC Press, Boca Raton, FL, USA., 2016
35*2016
Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnx Alloy
B Mukhopadhyay, G Sen, R Basu, S Mukhopadhyay, PK Basu
physica status solidi (b) 254 (11), 1700244, 2017
332017
Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base
WT Hung, D Barshilia, R Basu, HH Cheng, GE Chang
Optics Letters 45 (5), 1088-1091, 2020
312020
Optimized Ge1−xSnx/Ge Multiple-Quantum-Well Heterojunction Phototransistors for High-Performance SWIR Photodetection
AK Pandey, R Basu, GE Chang
IEEE Sensors Journal 18 (14), 5842-5852, 2018
262018
Estimated threshold base current and light power output of a transistor laser with InGaAs quantum well in GaAs base
R Basu, B Mukhopadhyay, PK Basu
Semiconductor science and technology 26 (10), 105014, 2011
252011
Modeling resonance-free modulation response in transistor lasers with single and multiple quantum wells in the base
R Basu, B Mukhopadhyay, PK Basu
IEEE Photonics Journal 4 (5), 1572-1581, 2012
242012
Comprehensive analysis and optimal design of Ge/GeSn/Ge pnp infrared heterojunction phototransistors
AK Pandey, R Basu, H Kumar, GE Chang
IEEE Journal of the Electron Devices Society 7, 118-126, 2018
222018
Analytical model for threshold-base current of a transistor laser with multiple quantum wells in the base
R Basu, B Mukhopadhyay, PK Basu
IET Optoelectronics 7 (3), 71-76, 2013
192013
Fluoride glass-based surface plasmon resonance sensor in infrared region: Performance evaluation
AK Pandey, AK Sharma, R Basu
Journal of Physics D: Applied Physics 50 (18), 185103, 2017
162017
Effect of Defects on the Performance of Si-based GeSn/Ge Mid-Infrared Phototransistors
HKR Basu
IEEE Sensors Journal, 2021
15*2021
Effect of defects on the performance of Si-based GeSn/Ge mid-infrared phototransistors
H Kumar, R Basu
IEEE Sensors Journal 21 (5), 5975-5982, 2020
152020
Simulation and performance evaluation of fiber optic sensor for detection of hepatic malignancies in human liver tissues
AK Sharma, J Gupta, R Basu
Optics & Laser Technology 98, 291-297, 2018
152018
Current gain and external quantum efficiency modeling of GeSn based direct bandgap multiple quantum well heterojunction phototransistor
V Chakraborty, S Dey, R Basu, B Mukhopadhyay, PK Basu
Optical and Quantum Electronics 49 (3), 1-13, 2017
142017
A weighted ensemble model for prediction of infectious diseases
K Shashvat, R Basu, AP Bhondekar, A Kaur
Current Pharmaceutical Biotechnology 20 (8), 674-678, 2019
132019
Noise analysis of group IV material-based heterojunction phototransistor for fiber-optic telecommunication networks
H Kumar, R Basu
IEEE Sensors Journal 18 (22), 9180-9187, 2018
132018
Tunnel injection transistor laser for optical interconnects
N Kumar, B Mukhopadhyay, R Basu
Optical and Quantum Electronics 50 (3), 1-12, 2018
132018
Effect of Active Layer Scaling on the Performance of Ge1–xSnx Phototransistors
H Kumar, R Basu
IEEE Transactions on Electron Devices 66 (9), 3867-3873, 2019
122019
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