| STM study of the Ge growth mode on Si(001) substrates M Tomitori, K Watanabe, M Kobayashi, F Iwawaki, O Nishikawa Appl. Surf. Sci., 322-328, 1994 | 182 | 1994 |
| Intestinal flora induces the expression of Cyp3a in the mouse liver T Toda, N Saito, N Ikarashi, K Ito, M Yamamoto, A Ishige, K Watanabe, ... Xenobiotica 39 (4), 323-334, 2009 | 95 | 2009 |
| LKM512 yogurt consumption improves the intestinal environment and induces the T‐helper type 1 cytokine in adult patients with intractable atopic dermatitis M Matsumoto, A Aranami, A Ishige, K Watanabe, Y Benno Clinical & experimental allergy 37 (3), 358-370, 2007 | 94 | 2007 |
| A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices N Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019 | 68 | 2019 |
| Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019 | 64 | 2019 |
| High-resolution Transmission Electron Microscopy of an Atomic Structure at a Si(001) Oxidation Front N Ikarashi, K Watanabe Physical Review B 62, 15989, 2000 | 57 | 2000 |
| Layered heteroepitaxial growth of germanium on Si(015) observed by scanning tunneling microscopy M Tomitori, K Watanabe, M Kobayashi, F Iwawaki, O Nishikawa Surface Science 301, 214-222, 1994 | 56 | 1994 |
| A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes T Iwamoto, T Ogura, M Terai, H Watanabe, H Watanabe, N Ikarashi, ... IEEE International Electron Devices Meeting 2003, 27.5. 1-27.5. 4, 2003 | 36 | 2003 |
| Quantitative gallium-67 scanning for predictive value in primary lung carcinoma T Higashi, H Wakao, K Nakamura, A Shimura, T Yokoyama, S Suzuki, ... Journal of Nuclear Medicine 21 (7), 628-632, 1980 | 36 | 1980 |
| Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride Y Wang, T Sohier, K Watanabe, T Taniguchi, MJ Verstraete, E Tutuc Applied Physics Letters 118 (10), 2021 | 29 | 2021 |
| The influence of incorporated nitrogen on the thermal stability of amorphous HfO2 and Hf silicate N Ikarashi, K Watanabe, K Masuzaki, T Nakagawa, M Miyamura J. Appl. Phys. 100, 063507, 2006 | 28 | 2006 |
| Multiple-Vt solutions in nanosheet technology for high performance and low power applications R Bao, K Watanabe, J Zhang, J Guo, H Zhou, A Gaul, M Sankarapandian, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2019 | 27 | 2019 |
| Effect of Nitrogen Profile and Fluorine Incorporation on Negative-Bias Temperature Instability of Ultrathin Plasma-Nitrided SiON MOSFETs M Terai, K Watanabe, S Fujieda IEEE TRANSACTIONS ON ELECTRON DEVICES 54, 1658-1665, 2007 | 25 | 2007 |
| 1.2nm HfSiON/SiON Stacked Gate Insulators for 65nm-node MISFETs M Saitoh, N Ikarashi, H Watanabe, S Fujieda, H Watanabe, T Iwamoto, ... International Conference on Solid State Devices and Materials, 2004 | 25 | 2004 |
| Dependence of electrical properties on nitrogen profile in ultrathin oxynitride gate dielectrics formed by using oxygen and nitrogen radicals K Watanabe Journal of Applied Physics 90, 4701-4707, 2001 | 25 | 2001 |
| Quantitative Characterization of Roughness at SiO2/Si Interfaces by Using Cross-sectional High-resolution Transmission Electron Microscopy N Ikarashi, K Watanabe Japan Journal of Applied Physics 39, 1278, 2000 | 25 | 2000 |
| Simple water treating apparatus K Watanabe US Patent 3,746,174, 1973 | 23 | 1973 |
| Thermal stability of a HfO2/SiO2 interface N Ikarashi, K Watanabe, K Masuzaki, T Nakagawa Appl. Phys. Lett. 88, 101912, 2006 | 22 | 2006 |
| Low-Leakage and Highly-Reliable 1.5nm SiON Gate-Dielectric Using Radical Oxynitridation for Sub-0.1mm CMOS, M Togo, K Watanabe, T Yamamoto, N Ikarashi, K Shiba, T Tatsumi, H Ono, ... Symposium on VLSI Technology, 2000 | 21 | 2000 |
| Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals K Watanabe Applied Physics Letters, 2940, 2000 | 18 | 2000 |
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