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Ha Sul Kim
Ha Sul Kim
Professor of Physics, Chonnam National University, South Korea
Verified email at jnu.ac.kr
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Cited by
Year
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ...
Nature 468 (7321), 286-289, 2010
4692010
nBn structure based on InAs∕ GaSb type-II strained layer superlattices
JB Rodriguez, E Plis, G Bishop, YD Sharma, H Kim, LR Dawson, ...
Applied Physics Letters 91 (4), 2007
3332007
Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
HS Kim, OO Cellek, ZY Lin, ZY He, XH Zhao, S Liu, H Li, YH Zhang
Applied Physics Letters 101 (16), 2012
1792012
Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers
N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna
Applied Physics Letters 96 (23), 2010
1752010
Mid-IR focal plane array based on type-II InAs∕ GaSb strain layer superlattice detector with nBn design
HS Kim, E Plis, JB Rodriguez, GD Bishop, YD Sharma, LR Dawson, ...
Applied Physics Letters 92 (18), 2008
1492008
Bias dependent dual band response from InAs∕ Ga (In) Sb type II strain layer superlattice detectors
A Khoshakhlagh, JB Rodriguez, E Plis, GD Bishop, YD Sharma, HS Kim, ...
Applied Physics Letters 91 (26), 2007
1222007
Quantum confinement effects in nanoscale-thickness InAs membranes
K Takei, H Fang, SB Kumar, R Kapadia, Q Gao, M Madsen, HS Kim, ...
Nano letters 11 (11), 5008-5012, 2011
1212011
Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors
K Takei, M Madsen, H Fang, R Kapadia, S Chuang, HS Kim, CH Liu, ...
Nano letters 12 (4), 2060-2066, 2012
1172012
Ultrathin body InAs tunneling field-effect transistors on Si substrates
AC Ford, CW Yeung, S Chuang, HS Kim, E Plis, S Krishna, C Hu, A Javey
Applied Physics Letters 98 (11), 2011
1122011
Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation
HS Kim, E Plis, A Khoshakhlagh, S Myers, N Gautam, YD Sharma, ...
Applied Physics Letters 96 (3), 2010
912010
Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate
E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ...
Semiconductor Science and Technology 25 (8), 085010, 2010
872010
Type II InAs∕ GaSb strain layer superlattice detectors with p-on-n polarity
E Plis, JB Rodriguez, HS Kim, G Bishop, YD Sharma, LR Dawson, ...
Applied Physics Letters 91 (13), 2007
792007
Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation
HS Kim, E Plis, N Gautam, S Myers, Y Sharma, LR Dawson, S Krishna
Applied Physics Letters 97 (14), 2010
712010
nBn detectors based on InAs∕ GaSb type-II strain layer superlattice
G Bishop, E Plis, JB Rodriguez, YD Sharma, HS Kim, LR Dawson, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
682008
Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness
K Takei, S Chuang, H Fang, R Kapadia, CH Liu, J Nah, H Sul Kim, E Plis, ...
Applied Physics Letters 99 (10), 2011
562011
Long-wave InAs/GaSb superlattice detectors based on nBn and pin designs
A Khoshakhlagh, S Myers, HS Kim, E Plis, N Gautam, SJ Lee, SK Noh, ...
IEEE Journal of Quantum Electronics 46 (6), 959-964, 2010
482010
Barrier engineered infrared photodetectors based on type-II InAs/GaSb strained layer superlattices
N Gautam, S Myers, AV Barve, B Klein, EP Smith, DR Rhiger, HS Kim, ...
IEEE Journal of Quantum Electronics 49 (2), 211-217, 2012
462012
Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors
E Plis, MN Kutty, S Myers, HS Kim, N Gautam, LR Dawson, S Krishna
Infrared Physics & Technology 54 (3), 252-257, 2011
452011
High operating temperature interband cascade focal plane arrays
ZB Tian, SE Godoy, HS Kim, T Schuler-Sandy, JA Montoya, S Krishna
Applied Physics Letters 105 (5), 2014
432014
Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors
E Plis, HS Kim, G Bishop, S Krishna, K Banerjee, S Ghosh
Applied Physics Letters 93 (12), 2008
412008
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